Indium Phosphide (InP) Heterojunction Bipolar Transistor (HBT) Passivation with Bisbenocyclyrobutene (BCB)
- 著者名:
Dang, L. Kaneshiro, E. Wang, J. Monier, C. Eldredge, J. Sato, K. Chang, P. C. Sawdai, D. Bhorania, R. Gutierrez-Aitken, A. Goosrky, M. - 掲載資料名:
- Proceedings of the Fourth International Symposium on Process Physics and Modeling in Semiconductor Technology
- シリーズ名:
- Electrochemical Society Proceedings Series
- シリーズ巻号:
- 2004-02
- 発行年:
- 2004
- 開始ページ:
- 103
- 終了ページ:
- 110
- 総ページ数:
- 8
- 出版情報:
- Pennington, NJ: Electrochemical Society
- ISSN:
- 01616374
- ISBN:
- 9781566774079 [1566774071]
- 言語:
- 英語
- 請求記号:
- E23400/961823
- 資料種別:
- 国際会議録
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7
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