Etch Induced Gate Oxide Degradation in an Electron Cyclotron Resonance Plasma Etcher

Etch Induced Gate Oxide Degradation in an Electron Cyclotron Resonance Plasma Etcher

著者名:

Lee, S.H.

掲載資料名:

Proceedings of the Third International Symposium on Corrosion and Reliability of Electronic Materials and Devices

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

1994-29

発行年:

1994

開始ページ:

293

終了ページ:

302

総ページ数:

10

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566770880 [1566770882]

言語:

英語

請求記号:

E23400/950680

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014138
シリーズID:	PA00000028
会議名:	International Symposium on Corrosion and Reliability of Electronic Materials and Devices
回次:	3rd
会議開催地:	Miami Beach, Florida, USA
会議開催年:	1994.10.09-1994.10.14

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