A Monitor for Polysilicon Etch Damage at Gate Periphery

A Monitor for Polysilicon Etch Damage at Gate Periphery

著者名:

掲載資料名:

Proceedings of the tenth symposium on plasma processing

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

1994-20

発行年:

1994

開始ページ:

173

終了ページ:

180

総ページ数:

8

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566770774 [1566770777]

言語:

英語

請求記号:

E23400/941901

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014129
シリーズID:	PA00000028
会議名:	International Symposium on Plasma Processing ; Meeting of the Electrochemical Society
回次:	10th ; 185th
会議開催地:	San Francisco, CA, USA
会議開催年:	1994.05.22-1994.05.27

類似資料:

1 国際会議録 Scatterometry measurements for process monitoring of polysilicon gate etch Bushman,S., Farrer,S. SPIE-The International Society for Optical Engineering	7 国際会議録 CD control of ASIC polysilicon gate level Tyminski,J.K., McNamara,S.J., Meisner,S.A., Gorham,R.R. SPIE-The International Society for Optical Engineering
2 国際会議録 Scatterometry for post-etch polysilicon gate metrology Christopher C. Baum, Robert A. Soper, Stephen W. Farrer, J. L. Shohet SPIE - The International Society of Optical Engineering	8 国際会議録 Etch Induced Gate Oxide Degradation in an Electron Cyclotron Resonance Plasma Etcher Lee, S.H., Lee, D-D., Kim, J-H., Shin, K-S., Park, H-S., Choi, H-S. Electrochemical Society
3 国際会議録 Development of a Polysilicon Gate Etch Process for 0.12 um Geometries Manders, B.S., de Laat, W.T., van Autryve, L.R. Electrochemical Society	9 国際会議録 PHOTOREFLECTANCE CHARACTERIZATION OF ETCH-INDUCED DAMAGE IN DRY ETCHED GaAs Glembocki, O. J., Tuchman, J. A., Ko, K. K., Pang, S. W., Giordana, A., Stutz, C. E. MRS - Materials Research Society
4 国際会議録 Characterization of Polysilicon Gate Etch with Ultra Thin Gate Oxide (<35 A゜) in a Decoupled Plasma Source Etcher Lii, T., Park, E., Lutz, J., Wu, W., Simpson, L., Mui, D. Electrochemical Society	10 国際会議録 DRY ETCH DAMAGE IN GaAs P-N JUNCTIONS Pearton, S. J., Abernathy, C. R. Materials Research Society
5 国際会議録 Damage Resulting from Polysilicon Gate Etching: Effect of Electrode Age and Sequencing within a Cassette Mikulan, P.I., Awadelkarim, O.O., Fonash, S.J., Reinhardt, K.A., Rembetski, J.F. Electrochemical Society	11 国際会議録 Dry Etch Damage in InN, InGaN and InAlN Pearton, S. J., Lee, J. W., MacKenzie, J. D., Vartuli, C. B., Donovan, S. M., Abernathy, C. R., Shul, R. J., Ren, F., … MRS - Materials Research Society
6 国際会議録 Characterization of Polysilicon Thin-Film Transistor Gate Dielectrics Zaman, R.J., Damiano, J., Jr., Batra, S., Manning, M., Banerjee, S.K. Electrochemical Society	12 国際会議録 INFLUENCE OF POLYSILICON PROCESSING ON THE QUALITY OF THIN RTP/FURNACE GATE OXIDES Haase, J., Ferretti, R., Prasad, S. Materials Research Society

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