The Mechanical Properties of NiAl Grown on GaAs by Molecular Beam Epitaxy

The Mechanical Properties of NiAl Grown on GaAs by Molecular Beam Epitaxy

著者名:

掲載資料名:

Proceedings of the Symposium on Large Area Wafer Growth and Processing for Electronic and Photonic Devices and the twentieth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XX)

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

1994-18

発行年:

1994

開始ページ:

203

終了ページ:

212

総ページ数:

10

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566770750 [1566770750]

言語:

英語

請求記号:

E23400/950354

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014127
シリーズID:	PA00000028
会議名:	Symposium on Large Area Wafer Growth and Processing for Electronic and Photonic Devices ; State-of-the-Art Program on Compound Semiconductors - SOTAPOCS ; Meeting of the Electrochemical Society
回次:	1994 ; 20th ; 185th
会議開催地:	San Francisco, CA, USA
会議開催年:	1994.05.22-1994.05.27

類似資料:

1 国際会議録 Growth of GaAs and InAlAs on High Quality, Epitaxial, NiAl Metal Film Hung, C. -Y., Weckwerth, M. V., Visokay, M. R., Pao, Y. C., Harris, J. S., Jr. MRS - Materials Research Society	7 国際会議録 Effects of Growth Sequence on Optical and Structural Properties of InAs/GaAs Quantum Dots Grown by Atomic Layer Molecular Beam Epitaxy Song, J.D., Park, Y.M, Shin, J.C., Lim, J.G., Park, Y.J., Choi, W.J., Han, I.K., Cho, W.J., Lee, J.I., Kim, H.S., Park, … Materials Research Society
2 国際会議録 THE GROWTH OF GaAS ON Si BY MOLECULAR BEAM EPITAXY Koch, S.M., Rosner, S.J., Schlom, Darrell, Harris, J. Jr. S. Materials Research Society	8 国際会議録 SPATIAL INHOMOGENEITIES OF THE LUMINESCENCE AND ELECTRICAL PROPERTIES OF MBE GROWN GaAs ON Si Reid, G.A., Nauka, K., Rosner, S.J., Koch, S.M., Harris, Jr., J.S. Materials Research Society
3 国際会議録 The carriers localization influence on the optical properties of GaAsN/GaAs heterostructures grown by molecular-beam epitaxy Kryzhanovskaya, N.V., Gladyshev, A.G., Sizov, D.S., Kovsh, A.R., Tsatsul'nikov, A.F., Chi, J.Y., Wang, J.S., Wei, L., … SPIE-The International Society for Optical Engineering	9 国際会議録 GRADED BUFFER LAYERS FOR MOLECULAR BEAM EPITAXIAL GROWTH OF HIGH In CONTENT InGaAs ON GaAs FOR OPTOELECTRONICS Lord, S.M., Pezeshki, B., Marshall, A.F., Harris, Jr., J.S., Fernandez, R., Harwit, A. Materials Research Society
4 国際会議録 Mechanical Properties of As-Grown and Ion-Beam-Modified GaN Films Kucheyev, S.O., Bradby, J.E., Williams, J.S., Swain, M.V., Toth, M., Phillips, M.R., Jagadish, C. Materials Research Society	10 国際会議録 ELECTRICAL PROPERTIES OF HEAVILY Be-DOED GaAs GROWN BY MOLECULAR BEAM EPITAXY Shibata, H., Makita, Y., Yamada, A., Ohnishi, N., Mori, M., Nakayama, Y., Beye, A.C., Mayer, K.M., Takahashi, T., … Materials Research Society
5 国際会議録 ANOMALOUS LUMINESCENCE PROPERTIES OF GaAs GROWN BY MOLECULAR BEAM EPITAXY Szafranek, I., Plano, M.A., McCollum, M.J., Jackson, S.L., Stockman, S.A., Cheng, K.Y., Stillman, G.E. Materials Research Society	11 国際会議録 MOLECULAR BEAM EPITAXY OF LAYERED Bi-Sr-Ca-Cu-O COMPOUNDS Schlom, D.G., Eckstein, J.N., Bozovic, I., Marshall, A.F., Sizemore, J.T., Chen, Z.J., von Dessonneck, K.E., Harris, … Materials Research Society
6 国際会議録 Defect Studies in n-Type GaN Grown by Molecular Beam Epitaxy Gotz, W., Oberman, D. B., Harris, J. S., Jr. MRS - Materials Research Society	12 国際会議録 Incorporation of Silicon in(311)A and(111)A GaAs Grown by Molecular Beam Epitaxy Wagner,J., Ramsteiner,M., Ashwin,M.J., Fahy,M.R., Newman,R.C., Braun,W., Ploog,K. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12