Electron Distribution and Transit Time Through the Base of Abrupt Heterojunction Bipolar Transistors

Electron Distribution and Transit Time Through the Base of Abrupt Heterojunction Bipolar Transistors

著者名:

Kumar, T.

掲載資料名:

Proceedings of the Second International Symposium on Quantum Confinement Physics and Applications

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

1994-17

発行年:

1994

開始ページ:

341

終了ページ:

355

総ページ数:

15

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566770491 [1566770491]

言語:

英語

請求記号:

E23400/941994

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014126
シリーズID:	PA00000028
会議名:	International Symposium on Quantum Confinement
回次:	2nd
会議開催地:	San Francisco, CA, USA
会議開催年:	1994.05.24-1994.05.26

類似資料:

1 国際会議録 Base Design for Pnp InAlAs-InGaAs Heterojunction Bipolar Transistors Datta, S., Shi, S., Roeneker, K.P., Cahay, M., Stanchina, W.E. Electrochemical Society	7 国際会議録 Effective Diffusion Coefficient of Minority Carriers in the Base of Graded Heterojunction Bipolar Transistors in the Presence of Self-Heating Effects Kumar, T., Cahay, M., Roenker, K. Electrochemical Society
2 国際会議録 Design of PNP InP-Based Heterojunction Bipolar Transistors for Microwave Applications Shi, S., Roenker, K.P., Kumar, T., Cahay, M.M. Electrochemical Society	8 国際会議録 Design of a MQW-IMD Device for Electronic, Pulse-Mode Neural Networks Roenker, K. P., Song, C. K., Kumar, T., Cahay, M., Shi, S., Stanchina, W. E., Osmon, M. A. Electrochemical Society
3 国際会議録 Bias Dependence of the Transmission Coefficient of Holes Through the Abrupt Emitter-Base Junction of a In0.52Al0.48As/In0.53Ga0.47As Pnp Heterojunction Bipolar … Kumar, T., Cahay, M., Roenker, K. Electrochemical Society	9 国際会議録 An Analytical Comparison of GaAs and InP-based HBTs Including Thermal Effects Hader, M.A., Gerner, F.M., Kumar, T., Cahay, M.M., Conklin, T., Roenker, K.P. Electrochemical Society
4 国際会議録 Modeling of InP/InGaAs and InAIAs/InGaAs PNP Heterojunction Bipolar Transistors Roenker, K. P., Shi, S., Kumar, T., Cahay, M. Electrochemical Society	10 国際会議録 Reliability Isssues for GaAs and InP -Based Heterojunction Bipolar Transistors K. P. Roenker Electrochemical Society
5 国際会議録 Base Pushout and High Current Effects in InP-based Pnp Heterojunction Bipolar Transistors Datta, S., Roenker, K.P., Cahay, M.M. Electrochemical Society	11 国際会議録 A Modified Gummel-Poon Model for AlGaAs/GaAs Heterojunction Bipolar Transistors S. E. Naugle, K. P. Roenker Electrochemical Society
6 国際会議録 High Current and Two Dimensional Effects in InP-based Pnp Heterojunction Bipolar Transistors Datta, S., Roenker, K.P., Cahay, M.M. Electrochemical Society	12 国際会議録 Effects of Optical Injection in GaInP-based Heterojunction Bipolar Phototransistors Govindaswamy, S., Heikenfeld, J., Sridhara, R., Roenker, K.P., Pan, N., Elliott, J. Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12