Charge Pumping, Low Frequency Noise, And Floating Gate Characterization Techniques Of SiO2 Gate Insulators In MOSFETs

Charge Pumping, Low Frequency Noise, And Floating Gate Characterization Techniques Of SiO2 Gate Insulators In MOSFETs

著者名:

掲載資料名:

Proceedings of the third Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

1994-16

発行年:

1994

開始ページ:

375

終了ページ:

384

総ページ数:

10

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566770484 [1566770483]

言語:

英語

請求記号:

E23400/942240

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014125
シリーズID:	PA00000028
会議名:	Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films
回次:	3rd
会議開催地:	San Francisco, CA, USA
会議開催年:	1994.05.23-1994.05.27

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