The Role Silicon Surface Roughness Has Upon Producing Highly Reliable Tunnel/Gate Dielectric's

The Role Silicon Surface Roughness Has Upon Producing Highly Reliable Tunnel/Gate Dielectric's

著者名:

掲載資料名:

Proceedings of the third Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

1994-16

発行年:

1994

開始ページ:

180

終了ページ:

184

総ページ数:

5

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566770484 [1566770483]

言語:

英語

請求記号:

E23400/942240

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014125
シリーズID:	PA00000028
会議名:	Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films
回次:	3rd
会議開催地:	San Francisco, CA, USA
会議開催年:	1994.05.23-1994.05.27

類似資料:

1 国際会議録 High-Quality Ultrathin CVD Si3N4 Gate Dielectrics Fabricated by Rapid Thermal Process Song, S. C., Luan, H. F., Gardner, M., Fulford, J., Allen, M., Kwong, D. L. MRS - Materials Research Society	7 国際会議録 Relationship Between Interfacial Roughness and Dielectric Reliability for Silicon Oxynitride Gate Dielectrics Processed With Nitric Oxide Sapjeta, J., Green, M. L., Chang, J. P., Silverman, P. J., Sorsch, T. W., Weir, B. E., Gladden, W., Ma, Y., Sung, C. Y., … MRS - Materials Research Society
2 国際会議録 Enhanced Degradation in P+-Poly PMOSFETs With Oxynitride Gate Dielectrics Under Hot-Hole Injection Chen, Y. Y., Gardner, M., Fulford, J., Wristers, D., Joshi, A. B., Kwong, D. L. MRS - Materials Research Society	8 国際会議録 Highly reliable thin hafnium oxide gate dielectric Kang, Laegu, Lee, Byoung-Hum, Qi, Wen-Jie, Joen, Yong-Joo, Nieh, Rence, Gopalan, Sundar, Onishi, Katsunori, Lee, Jack C. MRS-Materials Research Society
3 国際会議録 Novel LOCOS isolation process for producing highly reliable oxides Gardner,M.I., Kadoch,D. SPIE-The International Society for Optical Engineering	9 国際会議録 Improvement Of Stress-Induced Surface Microroughness For Highly Reliable Gate Oxide Shiozski, K., Okasaka, K., Nakano, J., Kolde, H. Electrochemical Society
4 国際会議録 Formation of High-Quality Oxynitride Gate Dielectrics by High Pressure Thermal Oxidation of Si in NO Song, S. C., Lee, C. H., Luan, H. F., Kwong, D. L., Gardner, M., Fulford, J., Allen, M., Bloom, J., Evans, R. MRS - Materials Research Society	10 国際会議録 Role of Ultra Thin Silicon Oxide Interfacial Layer in High Performance High Dielectric Constant Gate Dielectrics Singh, R., Fakhruddin, M., Poole, K.F., Kondapi, S.V., Gupta, A., Narayan, J., Kar, S. Electrochemical Society
5 国際会議録 Surface Treatment With uv-Excited Radicals for Highly-Reliable Gate Dielectrics Ito, Takashi, Sugino, Rinji, Nakanishi, Toshiro, Ohkubo, Satoshi, Tamura, Yasuyuki, Takasaki, Kanetake MRS - Materials Research Society	11 国際会議録 RPT N20 Oxides For Non-Volatile Memory Applications Gardner, M., Fulford, J., Bhat, M., Kwong, D.L. Electrochemical Society
6 国際会議録 Surface Treatment With uv-Excited Radicals for Highly Reliable Gate Dielectrics Ito, Takashi, Sugino, Rinji, Nakanishi, Toshiro, Ohkubo, Satoshi, Tamura, Yasuyuki, Takasaki, Kanetake MRS - Materials Research Society	12 国際会議録 Recent Developments in Ultratlsin Nitride Gate Stack Prepared by In-Situ RTP Multiprocessing for CMOS ULSI Song, S.C., Kini, B.Y., Loan, H.F., Kwong, D.-L., Gardner, M., Fulford, J., Wristers, D., Gelpey, J., Marcus, S. Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12