Mrad(Si) irradiation effects in Gate-All-Around Silicon-On-Insulator n-MOSFET's

Mrad(Si) irradiation effects in Gate-All-Around Silicon-On-Insulator n-MOSFET's

著者名:

Simoen, E.

掲載資料名:

Proceedings of the Sixth International Symposium on Silicon-on-Insulator Technology and Devices

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

1994-11

発行年:

1994

開始ページ:

375

終了ページ:

380

総ページ数:

6

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566770439 [1566770432]

言語:

英語

請求記号:

E23400/941388

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014120
シリーズID:	PA00000028
会議名:	International Symposium on Silicon-on-Insulator Technology and Devices ; Electrochemical Society Meeting
回次:	6th ; 185th
会議開催地:	San Francisco, CA, USA
会議開催年:	1994.05.22-1994.05.27

類似資料:

1 国際会議録 Impact of the back-gate bias on the low-frequency noise of partially depleted silicon-on-insulator MOSFETs Lukyanchikova, N. R., Garbar, N., Smolanka, A., Simoen, E., Mercha, A., Claeys, C. SPIE - The International Society of Optical Engineering	7 国際会議録 Back-gate induced noise overshoot in partially-depleted SOI MOSFETs Lukyanchikova, N., Garbar, N., Smolanka, A., Simoen, E., Claeys, C. Kluwer Academic Publishers
2 国際会議録 Influence of the Back Gate Voltage on the Total Series Resistance of Fully Depleted SOI MOSFETS at 300 K and 77 K Nicolett, A.S., Martino, J.A., Simoen, E., Claeys, C. Electrochemical Society	8 国際会議録 Experimental Assessment of Quantum Effects in the Low-Frequency Noise and RTS of Deep Submicron MOSFETs Simoen, E., Mercha, A., Claeys, C. Kluwer Academic Publishers
3 国際会議録 HALO Effects on 0.13 μm Floating-Body Partially Depleted SOI n-MOSFETs iII Low Temperature Operation J. A. Martino, M. A. Pavanello, E. Simoen, C. Claeys Electrochemical Society	9 国際会議録 Hot-Carrier Damage Effects on the Parameters of Random-Telegraph Signals in Small-Area MOSFETs Simoen, E., Claeys, C. Electrochemical Society
4 国際会議録 The Potential and Restrictions of Silicon-on-Insulator Technologies for Cryogenic Applications C. Claeys, E. Simoen Electrochemical Society	10 国際会議録 Extraction of the interface and oxide charge density in SOI MOSFETs Simoen, E, Claeys, C, Lukyanchikotva, N, Petrichuk, M, Garbar, N, Martino, J A, Sonnenberg, V Electrochemical Society
5 国際会議録 Influence of the Drain Bias and Gate Length of Partially Depleted SOI MOSFETs on the ZTC Biasing Point L.M. Camillo, J.A. Martino, E. Simoen, C. Claeys Electrochemical Society	11 国際会議録 Evaluation of the Channel Engineering Impact on the Analog Performance of Deep-Submicrometer Partially Depleted SOI MOSFETs at Low Temperatures Pavanello, M. A., Martino, J. A., Simoen, E., Claeys, C. Electrochemical Society
6 国際会議録 Noise and Tunneling Through the 2.5 nm Gate Oxide in SOI MOSFETs Lukyanchikova, N., Simoen, E., Mercha, A., Claeys, C. Kluwer Academic Publishers	12 国際会議録 Improved Model to Determine the Generation Lifetime in Double Gate SOI nMOSFETs M. Galeti, J. A. Martino, E. Simoen, C. Claeys Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12