Structure and electrical characteristics of a thin buried oxide containing silicon inclusions

Structure and electrical characteristics of a thin buried oxide containing silicon inclusions

著者名:

掲載資料名:

Proceedings of the Sixth International Symposium on Silicon-on-Insulator Technology and Devices

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

1994-11

発行年:

1994

開始ページ:

224

終了ページ:

229

総ページ数:

6

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566770439 [1566770432]

言語:

英語

請求記号:

E23400/941388

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014120
シリーズID:	PA00000028
会議名:	International Symposium on Silicon-on-Insulator Technology and Devices ; Electrochemical Society Meeting
回次:	6th ; 185th
会議開催地:	San Francisco, CA, USA
会議開催年:	1994.05.22-1994.05.27

類似資料:

1 国際会議録 A MODEL FOR ROOM-TEMPERATURE WET OXIDATION OF SILICON Cerofolini, G.F., Meda, L., Falster, R. Electrochemical Society	7 国際会議録 Electrical characterization of the interface between buried oxide and silicon substrate Dimitrakis, P., Papaioannou, G.J., Cristoloveanu, S. Electrochemical Society
2 国際会議録 SUPERADDITIVITY IN THE IMPLANTATION OF MOLECULAR IONS Cerofolini, G.F., Meda, L., Volpones, C. Materials Research Society	8 国際会議録 STRUCTURAL AND ELECTRICAL CHARACTERISTICS OF THE THERNALLY EVAPORATED InSb THIN FILMS Yeh, S., Cheng, D.J., Chi, G.F., Chu, M.T. Materials Research Society
3 国際会議録 The Early Oxynitridation Stages of Hydrogen-Terminated Single-Crystalline Silicon in N2O Ambient Cerofolini, G.F., Camalleri, M., Condorelli, G.G., Fragala, I.L., Galati, C., Loreenti, S., Renna, L., Viscuso, O. Materials Research Society	9 国際会議録 The Extended Nature of Point-Like Defects in Silicon Cerofolini F. G. Plenum Press
4 国際会議録 Porous Silica Doping by Ion Bombardment Cerofolini, G. F., Meda, L., Anselmino, A., Ranghino, G. MRS - Materials Research Society	10 国際会議録 The (100) Surface of Semiconductor Silicon (in Practical Conditions): Preparation, Evolution, Passivation Cerofolini, G. F. Springer
5 国際会議録 Adsorption with soft adsorbents and adsorbates. Theory and practice Cerofolini, G. F., Meda, L., Bandosz, T. J. Elsevier	11 国際会議録 Electrical Properties of Metal-Buried Oxide-Silicon Structures Fabricated by Low Dose SIMOX Process Dimitrakis, P., Papaioannou, G., Cristoloveanu, S. Electrochemical Society
6 国際会議録 Improvement of SIMOX buried oxide breakdown voltage by multiple step and multiple energy implantation Gassel, H., Vogt, H. Electrochemical Society	12 国際会議録 IMPLANT ISOLATION OF DEVICE STRUCTURES CONTAINING BURIED, HIGHLY-DOPED LAYERS Pearton, S.J., Ren, F., D'asaro, L.A., Hobson, W.S., Fullowan, T.R., Lothian, J., Abernathy, C.R., Kopf, R.F., Kuo, … Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12