EFFECTS OF LOW-DOSE SILICON, CARBON AND OXYGEN IMPLANTATION DAMAGE ON DIFFUSION OF PHOSPHORUS IN SILICON

EFFECTS OF LOW-DOSE SILICON, CARBON AND OXYGEN IMPLANTATION DAMAGE ON DIFFUSION OF PHOSPHORUS IN SILICON

著者名:

掲載資料名:

Proceedings of the Seventh International Symposium on Silicon Materials Science and Technology

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

1994-10

発行年:

1994

開始ページ:

1041

終了ページ:

1049

総ページ数:

9

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566770422 [1566770424]

言語:

英語

請求記号:

E23400/941387

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014119
シリーズID:	PA00000028
会議名:	International Symposium on Silicon Materials Science and Technology
回次:	7th
会議開催地:	San Francisco, CA, USA
会議開催年:	1994.05.23-1994.05.27

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2 国際会議録 HIGH DOSE CARBON ION IMPLANTATION STUDIES IN SILICON Srikanth, K., Chu, M., Ashok, S., Nguyen, N., Vedam, K. Materials Research Society	8 国際会議録 Calibration Of Phosphorus Implantation Dose In Silicon By Radiochemical Neutron Activation Analysis Paul, Rick L., Simons, David S. Materials Research Society
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