HIGH SENSITIVITY SURFACE ANALYSIS OF SILICON WAFERS BY TIME-OF FLIGHT SECONDARY ION MASS SPECTROMETRY (TOF-SIMS)

HIGH SENSITIVITY SURFACE ANALYSIS OF SILICON WAFERS BY TIME-OF FLIGHT SECONDARY ION MASS SPECTROMETRY (TOF-SIMS)

著者名:

掲載資料名:

Proceedings of the Third International Symposium on Cleaning Technology in Semiconductor Device Manufacturing

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

1994-7

発行年:

1994

開始ページ:

554

終了ページ:

564

総ページ数:

11

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566770385 [1566770386]

言語:

英語

請求記号:

E23400/941397

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014117
シリーズID:	PA00000028
会議名:	International Symposium on Cleaning Technology in Semiconductor Device Manufacturing ; Electrochemical Society Fall Meeting
回次:	3rd ; 1993
会議開催地:	New Orleans, Louisiana, USA
会議開催年:	1993.10.15-1993.10.20

類似資料:

1 国際会議録 ANALYSIS OF SUBMICRON ALUMINUM AND ALUMINA PARTICLES BY TIME-OF-FLIGHT SECONDARY ION MASS SPECTROMETRY (TOF-SIMS) Lindley, Patricia M., Schueler, Bruno W., Diebold, Main C., Hockett, Richard S., Mulholland, George Electrochemical Society	7 国際会議録 Quantitative secondary ion mass spectrometry (SIMS) of III-V materials Van Lierde, P., Tian, C., Rothman, B., Hockett, R.A. SPIE-The International Society for Optical Engineering
2 国際会議録 FEASIBILITY OF ANALYSIS OF SILICON SURFACE CLEAN TIME-OF-FLIGHT SECONDARY ION MASS SPECTROMETRY Hossain-Pas, S.D., Pas, M.F., Douglas, M.A. Electrochemical Society	8 国際会議録 Quantitative Secondary Ion Mass Spectrometry (SIMS) of III-V Materials Lierde, P. van, Tian, C., Rothman, B., Hockett, R.A. Materials Research Society
3 国際会議録 Analysis of Organic Contamination in Gases Using Nonvolatile Residue (NVR) Monitors and Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS) Strossman, G. S., Lindley, P. M., Bowers, W. D. MRS - Materials Research Society	9 国際会議録 Quantitative Measurement of Boron and Phosphorus in Solar Grade Silicon Feedstocks by High Resolution Fast-Flow Glow-Discharge Mass Spectrometry Karol Putyera, Kenghsien Su, Changhsiu Liu, R.S. Hockett, Larry Wang Materials Research Society
4 国際会議録 SURFACE SIMS ROUND ROBIN FOR NA, AL AND K ON SILICON WAFERS Hockett, R.S., Diebold, Alain Electrochemical Society	10 国際会議録 Advances in Characterization of III-Nitrides by Secondary Ion Mass Spectrometry Lierde, P. V., Tian, C., Hockett, R.A., Wei, L., Hockett, D.S., Alejandro, P.C., Keller, S., DenBaars, S.P. Electrochemical Society
5 国際会議録 Semiquantitative analysis of atherosclerotic plaque using optical coherence tomography and time-of-flight secondary ion mass spectrometry Korol, R.M., Togonu-Bickersteth, B., Yang, V.X., Dimov, S., Vatsya, P., Gordon, M., Vitkin, A., Liu, L., Canham, P., … SPIE-The International Society for Optical Engineering	11 国際会議録 Surface Sensitivity of Electron Energy Loss Spectroscopy and Secondary-Ion Mass Spectrometry of Organic Films Pomerantz, M., Purtell, R. J., Twieg, R. J., Chuang, S.-F., Reuter, W., Eldridge, B. N., Novak, F. P. American Chemical Society
6 国際会議録 Concentration of N and P in SiC Investigated by Time-Of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS) Acarturk, T., Semmelroth, K., Pensl, G., Saddow, S. E., Starke, U. Trans Tech Publications	12 国際会議録 Morphology Identification of a Polymer Blend by Time of Flight Secondary Ion Mass Spectrometry (ToF-SIMS) Chemical Imaging Feng, J., Chan, C. -M., Weng, L. -T. Society of Plastics Engineers, Inc. (SPE)

1

2

3

4

5

6

7

8

9

10

11

12