Electric Field Effect on Iron-Boron Pair/Interstitial Iron Dissociation/Re-Assodation

Electric Field Effect on Iron-Boron Pair/Interstitial Iron Dissociation/Re-Assodation

著者名:

掲載資料名:

Proceedings of the Symposium on the Degradation of Electronic Devices due to Device Operation as well as Crystalline and Process-Induced Defects

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

1994-1

発行年:

1994

開始ページ:

298

終了ページ:

304

総ページ数:

7

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566770378 [1566770378]

言語:

英語

請求記号:

E23400/941393

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014111
シリーズID:	PA00000028
会議名:	Symposium on the Degradation of Electronic Devices Due to Device Operation as Well as Crystalline and Process-Induced Defects
回次:	1993
会議開催地:	New Orleans, LA, USA
会議開催年:	1993.10.11-1993.10.13

類似資料:

1 国際会議録 Metastability of Electronic Properties of Interfacial Defects in Si/Si(Ge) Heterostructures Koveshnikov, S.V., Agarwai, A., Rozgonyi, G.A. Electrochemical Society	7 国際会議録 Electrical and Structural Properties of MeV Si+ Ion Implantation in Silicon Agarwal, Aditya, Koveshnikov, S., Christensen, K., Rozgonyi, G. A. MRS - Materials Research Society
2 国際会議録 LOW TEMPERATURE IMPURITY GETTERING FOR GIGA-SCALE INTEGRATED CIRCUIT TECHNOLOGY Rozgonyi, G.A., Koveshnikov, S., Agarwal, A. Electrochemical Society	8 国際会議録 Impact of Heavy Boron and Antimony Doping on COPs and GOI Ono, T., Hone, H., Miyazaki, M., Tsuya, H., Rozgonyi, G.A. Electrochemical Society
3 国際会議録 THE INFLUENCE OF AN IN-SITU ELECTRIC FIELD ON H+ AND He+ IMPLANTATION INDUCED DEFECTS IN SILICON Ravi, J., Erokhin, Yu., Koveshnikov, S., Rozgonyi, G. A., White, C. W. MRS - Materials Research Society	9 国際会議録 PROCESS PHYSICS OF THE IRON-BORON PAIR RECOMBINATION AND DISSOCIATION IN p-TYPE SILICON Wijaranakula, W. Materials Research Society
4 国際会議録 Gettering of Fe, Cu and Ni in MeV Ion Implanted Epitaxial Silicon Koveshnikov, S., Kononchuk, O., Beaman, K., Rozgonyi, G.A., Gonzalez, F. Electrochemical Society	10 国際会議録 SURFACE RECOMBINATION VELOCITY AND RECOMBINATION LIFETIME IN IRON CONTAMINATED SILICON Buczkowski, A., Shimura, F., Rozgonyi, G.A. Electrochemical Society
5 国際会議録 EFFECT OF HEAVY BORON DOPING ON OXIDE PRECIPITATE GROWTH IN CZOCHRALSKI SILICON Ono, T., Asayama, E., Horie, H., Hourai, M., Sueoka, K., Tsuya, H., Rozgonyi, G.A. Electrochemical Society	11 国際会議録 Effect of Al or Poly-Si Gate Electrodes and Oxide Thickness on Gate Oxide Integrity and Leakage Site Observations Tamatsuka, M., Kimura, M., Oka, S., Rozgonyi, G.A. Electrochemical Society
6 国際会議録 GENERATION AND DISSOCIATION OF IRON-BORON PAIRS IN SILICON Suezawa, Masashi, Sumino, Koji Materials Research Society	12 国際会議録 Behavior of Si Interstitials and Boron-Interstitial Pairs at the Si/SiO2 Interface Kirichenko, Taras A., Yu, Decai, Banerjee, Sanjay K., Hwang, Gyeong S. Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12