Hydrogen Annealing of Silicon Wafer | 東京工業大学附属図書館文献データベース

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Hydrogen Annealing of Silicon Wafer

著者名:

さらに 4 件

掲載資料名:

Proceedings of the Symposium on the Degradation of Electronic Devices due to Device Operation as well as Crystalline and Process-Induced Defects

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

1994-1

発行年:

1994

開始ページ:

101

終了ページ:

110

総ページ数:

10

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566770378 [1566770378]

言語:

英語

請求記号:

E23400/941393

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014111
シリーズID:	PA00000028
会議名:	Symposium on the Degradation of Electronic Devices Due to Device Operation as Well as Crystalline and Process-Induced Defects
回次:	1993
会議開催地:	New Orleans, LA, USA
会議開催年:	1993.10.11-1993.10.13

類似資料:

1 国際会議録 PERFECT SILICON SURFACE BY HYDROGEN-ANNEALING Kubota, H., Numano, M., Amai, T., Miyashita, M., Samata, S., Matsushita, Y. Electrochemical Society	7 国際会議録 Surface Structure of Hydrogen Annealed Silicon Wafer Using Ozonized Water and Dilute HF Cleaning Kurita, H., Izunome, K., Nagahama, H., Ino, T., Yamabe, J., Hayamizu, N., Sakurai, N. Electrochemical Society
2 国際会議録 INVITED: HYDROGEN ANNEAL OF SILICON WAFER FORMATION OF HIGH QUALITY DEVICE ACTIVE LAYER Matsushita, Y., Sanada, M., Tanabe, A., Takeda, R., Shimaoi, N., Kobayashi, K. Electrochemical Society	8 国際会議録 Influence of LSTD Size on the Formation of Denuded Zone in Hydrogen Annealed Cz Silicon Wafers Takeda, R., Minami, T., Saito, H., Hirano, Y., Fujimon, H., Kashima, K., Matsushita, Y. Electrochemical Society
3 国際会議録 Generation of Oxidation Induced Stacking Faults in CZ Silicon Wafers Sueoka,K., Akatsuka,M., Nishihara,K., Yamamoto,T., Kobayashi,S. Trans Tech Publications	9 国際会議録 Influence of LSTD Size on the Formation of Denuded Zone in Hydrogen Annealed Cz Silicon Wafers Takeda,R., Minami,T., Saito,H., Hirano,Y., Fujimori,H., Kashima,K., Matsushita,Y. Electrochemical Society, SPIE-The International Society for Optical Engineering
4 国際会議録 Use of Diode Diagnostics for Silicon Wafer Quality Characterization: Effect of COP on PN Junction Leakage* Kubota, H., Nagano, H., Sugamoto, J., Matsushita, H., Momose, M., Nitta, S., Samata, S., Tsuchiya, N. Electrochemical Society	10 国際会議録 MORPHOLOGY CHANGE OF OXIDE PRECIPITATES IN CZ SILICON DURING TWO-STEP ANNEALING Sueoka, K., Ikeda, N., Yamamoto, T., Kobayashi, S. Electrochemical Society
5 国際会議録 Use of Diode Diagnostics for Silicon Wafer Quality Characterization: Effect of COP on PN Junction Leakage Kubota,H., Nagano,H., Sugamoto,J., Matsushita,H., Momose,M., Nitta,S., Samata,S., Tsuchiya,N. Electrochemical Society, SPIE-The International Society for Optical Engineering	11 国際会議録 High Quality Hydrogen-Annealed Wafers Yoshikawa, J., Takeda, R., Hayashi, K., Shirai, H., Matsushita, Y. Electrochemical Society
6 国際会議録 Junction Leakage Current in Hydrogen Annealed Wafers - DZ Evaluation by Junction Leakage Current Samata, S., Ito, E., Nagura, M., Udo, Y., Kubota, H. Electrochemical Society	12 国際会議録 High Performance Silicon Wafer with Wide Grown-in Void Free Zone and High Density Internal Gettering Site Achieved via Rapid Crystal Growth with Nitrogen Doping … Tamatsuka, M., Kobayashi, N., Tobe, S., Masui, T. Electrochemical Society

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