N2O-Based Gate Dielectrics for ULSI Applications

N2O-Based Gate Dielectrics for ULSI Applications

著者名:

掲載資料名:

Proceedings of the Symposium on the Degradation of Electronic Devices due to Device Operation as well as Crystalline and Process-Induced Defects

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

1994-1

発行年:

1994

開始ページ:

25

終了ページ:

35

総ページ数:

11

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566770378 [1566770378]

言語:

英語

請求記号:

E23400/941393

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014111
シリーズID:	PA00000028
会議名:	Symposium on the Degradation of Electronic Devices Due to Device Operation as Well as Crystalline and Process-Induced Defects
回次:	1993
会議開催地:	New Orleans, LA, USA
会議開催年:	1993.10.11-1993.10.13

類似資料:

1 国際会議録 Materials and processing issues in the development of N2O/NO-based ultrathin oxynitride gate dielectrics for CMOS ULSI applications Kim,B.Y., Wristers,D., Kwong,D.L. SPIE-The International Society for Optical Engineering	7 国際会議録 PERFORMANCE AND REALIABILITY OF ULTATHIN OXYNITRIDE GATE DIELECTRICS PREPARED USING IN-SITU MULTIPLE RAPID THERMAL PROCESSING Lo, G. Q., Shih, d. K., Ting W., Kwong, D. L. Materials Research Society
2 国際会議録 Electrical characteristics of n-and p-MOSFETs with N2O-reoxidized NH3-nitrided N2O oxides as gate dielectrics Han,L.K., Wang,H., Yan,J., Kim,J.H., Yoon,G.W., Kwong,D.-L. SPIE-The International Society for Optical Engineering	8 国際会議録 Characterization of High Quality Nitrided Gate Dielectric Films Manufactured in Reduced Pres-sure Furnace for ULSI CMOS Applications Yoon, G., Epstein, Y. Electrochemical Society
3 国際会議録 Process Dependence of MOSFET Performance and Reliability with N2O-Based Furnace-Grown Gate Oxides Han, L.K, Wang, H.H., Yoon, G.W., Allman, D., Kwong, D.L. Electrochemical Society	9 国際会議録 Polarity Dependence of Dielectric Breakdown in NO/N2 O-Based Oxynitrides Kim, B.Y., Han, L.K., Wristers, D., Fulford, J., Kwong, D.-L. Electrochemical Society
4 国際会議録 Recent Developments In Ultrathin Oxynitride And Oxide/Nitride Stacked Films Prepared By In-Situ RTP Multiprocessing Bhat, M., Yoon, G.W., Kim, J., Han, L,K., Yan, J., Wristers, D., Kwong, D.L. Electrochemical Society	10 国際会議録 ULTRATHIN OXYNITRIDE GATE DIELECTRIC PREPARED BY RAPID THERMAL OXIDATION IN N2O FOR ULSI APPLICATIONS Hwang, Hyunsang, Ting, Wenchi, Kwong, Dim-Lee, Lee, Jack Materials Research Society
5 国際会議録 ELECTRICAL CHARACTERISTICS OF ULTRATHIN STACKED NITRIDE/OXIDE GATE DIELECTRICS PREPARED BY RAPID THERMAL PROCESSING Ting, W., Ahn, J., Kwong, D. L. Materials Research Society	11 国際会議録 RTP-CVD OF Si MATERIALS AND DEVICES FOR ULSI APPLICATIONS Kwong, D.L., Hsieh, T.Y., Jung, K.H. Materials Research Society
6 国際会議録 High Quality Oxynitride Gate Dielectrics Prepared by Reoxidation of NH3-Nitrided SiO2 and N2O-Oxide in N2O Ambient Han, L.K., Kim, J., Wang, H.H., Yan, J., Kwong, D.L. Electrochemical Society	12 国際会議録 New Reliability Issues of CMOS Transistors with 1.3nm Thick Gate Oxide Cho, B.J., Chen, G., Loh, W.Y., Kwong, D.L. Electrochemical Society

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