Degradation of Minority Carrier Generation Life- time in the Silicon Substrate during Poly-Si Gate RIE Overetch

Degradation of Minority Carrier Generation Life- time in the Silicon Substrate during Poly-Si Gate RIE Overetch

著者名:

掲載資料名:

Proceedings of the Symposium on Highly Selective Dry Etching and Damage Control

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

1993-21

発行年:

1993

開始ページ:

302

終了ページ:

310

総ページ数:

9

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566770668 [1566770661]

言語:

英語

請求記号:

E23400/932473

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014110
シリーズID:	PA00000028
会議名:	Symposium on Highly Selective Dry Etching and Damage Control
回次:	1993
会議開催地:	Honolulu, HI, USA
会議開催年:	1993.05.19-1993.05.21

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