The Effect of Surface Contamination on Avalanche Breakdown in Recessed Al-Gate GaAs MESFETs

The Effect of Surface Contamination on Avalanche Breakdown in Recessed Al-Gate GaAs MESFETs

著者名:

Hattori, R.

掲載資料名:

Proceedings of the Symposium on Logic and Functional Devices for Photonics and the seventeenth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XVII)

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

1993-10

発行年:

1993

開始ページ:

227

終了ページ:

236

総ページ数:

10

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566770545 [1566770548]

言語:

英語

請求記号:

E23400/932025

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014099
シリーズID:	PA00000028
会議名:	Symposium on Logic and Functional Devices for Photonics ; State-of-the-Art Program on Compound Semiconductors - SOTAPOCS ; Meeting of the Electrochemical Society
回次:	1992 ; 17th ; 182nd
会議開催地:	Toronto, Ontario, Canada
会議開催年:	1992.10.11-1992.10.16

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