Blank Cover Image

DIMINUTION OF ELECTRICAL ACTIVITY AND REDUCTION OD DIEEFUSION OD ARSENIC IMPLANTED IN SILICON BY SIMULTANEOUS IMPLANTATION OF BORON IONS

著者名:
Yokota, K.
Sunagawa, Y.
Miyashita, F.
Hirao, T.
Horino, Y.
Satho, M.
Ando, Y.
Matsuda, K.
さらに 3 件
掲載資料名:
Proceedings of the Third International Symposium on Process Physics and Modeling in Semiconductor Technology
シリーズ名:
Electrochemical Society Proceedings Series
シリーズ巻号:
1993-6
発行年:
1993
開始ページ:
556
終了ページ:
564
総ページ数:
9
出版情報:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566770644 [1566770645]
言語:
英語
請求記号:
E23400/930578
資料種別:
国際会議録

類似資料:

1 国際会議録 Influence of Simultaneously Implanted As+ Ions on Diffusivity and Activation Efficiency of B Atoms Implanted into Silicon

Yokota,K., Nakamura,T., Miyashita,F., Hirai,K., Takano,H., Kumagai,M., Ando,Y., Matsuda,K.

Trans Tech Publications
7 国際会議録 SUPPRESSION OF ION-INDUCED CHARGE COLLECTION BY HIGH-ENERGY B+-IMPLANTED LAYER

Kishimoto, T., Sayama, H., Takai, M., Ohno, Y., Sonoda, K., Nishimura, T., Kinomura, A., Horino, Y., Fujii, K.

MRS - Materials Research Society
2 国際会議録 MEGAVOLT BORON AND ARSENIC IMPLANTATION INTO SILICON

Bryne, P. F., Cheung, N. W., Tam, S., Hu, C., Shih, Y. C., Washburn, J., Starthman, M.

North-Holland
8 国際会議録 Investigation of ion-implanted boron in diamond

Bharuth-Ram,K., Ittennann,B., Metzner,H., Fullgrabe,M., Heemeier,M., Kroll,F., Mai,F., Matbach,K., Meier,P., Peters,D., …

Trans Tech Publications
3 国際会議録 Low-energy model for ion implantation of arsenic and boron into (100) single-crystal silicon

Obradovic,B.J., Morris,S.J., Morris,M.F., Tian,S., Wang,G., Beardmore,K., Snell,C., Jackson,J., Baummann,S., Tasch,A.F.

SPIE-The International Society for Optical Engineering
9 国際会議録 Room-Temperature Migration of Ion-Implanted Boron in Silicon

Collart, E. J. H., Weemers, K., Gravesteijn, D. J., Berkum, J. G. M. van, Cowern, N. E. B.

MRS - Materials Research Society
4 国際会議録 Junction Depth Reduction Of Ion Implanted Boron In Silicon Through Fluorine Ion Implantation

Robertson, L. S., Warnes, P. N., Jones, K. S., Earles, S. K., Law, M. E., Downey, D. F., Falk, S., Liu, J.

Materials Research Society
10 国際会議録 Diffusion of Ion-Implanted Boron and Silicon in Germanium

Uppal, Suresh, Willoughby, A.F.W., Bonar, J.M., Cowern, N.E.B., Morris, R.J.H., Dowsett, M.G.

Materials Research Society
5 国際会議録 Fabrication of Compact Ion Implanter for Silicon Carbide Devices

Mitani, S., Yamaguchi, S., Furukawa, S., Nakata, T., Horino, Y., Ono, R., Hosokawa, Y., Miyamoto, M., Nishino, S.

Trans Tech Publications
11 国際会議録 The Mechanisms of Iron Gettering in Silicon by Boron Ion-Implantation

Benton, J.L., Stolk, P.A., Eaglesham, D.J., Jacobson, D.C., Cheng, J.Y., Poate, J.M., Myers, S.M., Haynes, T.E

Electrochemical Society
6 国際会議録 In-situ optical coatings on subsurface damage-removed substrate

Yoshida,K., Hirao,T., Kamimura,T., Ochi,K., Kaku,S., Yoshida,H., Fujita,H., Tani,F., Sunagawa,M., Okamoto,Y.

SPIE-The International Society for Optical Engineering
12 国際会議録 HCl OXIDATION OF HIGH DOSE ARSENIC IMPLANTED SILICON

Choi, Seong Soo, Numan, M.Z., Finstad, T.G., Chu, W.K., Fathy, D.

Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12