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A PHENOMENOLOGICAL MODEL FOR DAMAGE-ENHANCED DIFFUSION OF ION-IMPLANTED BORON IS SILICON

著者名:
Morehead, F.F.  
掲載資料名:
Proceedings of the Third International Symposium on Process Physics and Modeling in Semiconductor Technology
シリーズ名:
Electrochemical Society Proceedings Series
シリーズ巻号:
1993-6
発行年:
1993
開始ページ:
34
終了ページ:
45
総ページ数:
12
出版情報:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566770644 [1566770645]
言語:
英語
請求記号:
E23400/930578
資料種別:
国際会議録

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