Sticking Probability of the Film Precursor in Epitaxial Growth of SiC Films by Chemical Vapor Deposition from SiH4 and C3H8

Sticking Probability of the Film Precursor in Epitaxial Growth of SiC Films by Chemical Vapor Deposition from SiH4 and C3H8

著者名:

掲載資料名:

Proceedings of the Twelfth International Symposium on Chemical Vapor Deposition

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

1993-2

発行年:

1993

開始ページ:

401

終了ページ:

407

総ページ数:

7

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566770743 [1566770742]

言語:

英語

請求記号:

E23400/930161

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014091
シリーズID:	PA00000028
会議名:	International Symposium on Chemical Vapor Deposition
回次:	12th
会議開催地:	Honolulu, Hawaii, USA
会議開催年:	1993.05.00

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