Origin of Selectivity in Chemical Vapor Deposition of Tungsten Using SiH4 or SiH2F2 as a Reducing Gas of WF6

Origin of Selectivity in Chemical Vapor Deposition of Tungsten Using SiH4 or SiH2F2 as a Reducing Gas of WF6

著者名:

掲載資料名:

Proceedings of the Twelfth International Symposium on Chemical Vapor Deposition

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

1993-2

発行年:

1993

開始ページ:

250

終了ページ:

256

総ページ数:

7

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566770743 [1566770742]

言語:

英語

請求記号:

E23400/930161

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014091
シリーズID:	PA00000028
会議名:	International Symposium on Chemical Vapor Deposition
回次:	12th
会議開催地:	Honolulu, Hawaii, USA
会議開催年:	1993.05.00

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