Ultra-Thin Silicon Oxynitride Gate-Dielectric Made by ECR Plasmas

Ultra-Thin Silicon Oxynitride Gate-Dielectric Made by ECR Plasmas

著者名:

掲載資料名:

Advanced short-time thermal processing for Si-based CMOS devices : proceedings of the international symposium

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2004-01

発行年:

2004

開始ページ:

216

終了ページ:

221

総ページ数:

6

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566774062 [1566774063]

言語:

英語

請求記号:

E23400/200401

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014089
シリーズID:	PA00000028
会議名:	International symposium an advanced short-time thermal processing for Si-based CMOS devices ; Meeting of the Electrochemical Socity
回次:	2nd ; 205th
会議開催地:	San Antonio, TX, USA
会議開催年:	2004.05.10-2004.05.12

類似資料:

1 国際会議録 Silicon Oxynitride Gate-Dielectric Made by ECR Plasma Oxynitridation Manera, G. A., Diniz, J. A., Moshkalyov, S. A., Lujan, G. S., Doi, I., Swart, J. W. Electrochemical Society	7 国際会議録 One-step silicon nitride passivation by ECR-CVD for heterostructure transistors and MIS devices Diniz, J.A., de Barros, L.E.M., Jr., Yoshioka, R.T., Lujan, G.S., Danilov, I., Swart, J.W. Materials Research Society
2 国際会議録 Characteristics of Silicon Oxynitrides Made By ECR Plasmas Diniz, J.A., Tatsch, P.J., Swart, J. Electrochemical Society	8 国際会議録 Orientation-Dependent Anisotropic Etching Simulation in Silicon Wafer Neli, R.R., Doi, I., Ribas, R.P., Diniz, J.A., Swart, J.W. Electrochemical Society
3 国際会議録 Locos Isolation Made by Silicon Nitride ECR Plasma Deposition at Room Temperature Pereira, M.A., Diniz, J.A., Doi, I., Swan, J.W. Electrochemical Society	9 国際会議録 Formation of Nickel Silicides onto (100) Silicon Wafcr Surfaces Using a Thin Platinum Interlayer Reis, R.W., dos Santos Filho, S.G., Doi, I., Swart, J.W. Electrochemical Society
4 国際会議録 The Effect of Nitrogen Concentration at Silicon Oxynitride Gate Insulators Formed by 28N2+ Implantation into Silicon with Additional Conventional or Rapid … Felicio, A.G., Diniz, J.A., Godoy Fo., J., Doi, I., Pudeozi, M.A.A., Swart, J.W. Electrochemical Society	10 国際会議録 High Quality Thin Gate Dielectric Using ECR N2O-Plasma for Future Poly-Si TFT Applications Lee, J.W., Lee, N.I., Han, C.H. Electrochemical Society
5 国際会議録 Suspended Membranes Made by Silicon Nitride Deposited by ECR-CVD Biasotto, C., Monte, B., Neli, R. R., Ramos, A. C. S., Diniz, J. A., Moshkalyov, S.A., Doi, I., Swart, J. W. Electrochemical Society	11 国際会議録 Silicon nitride deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposititon for micromachining applications Panepucci,R.R., Diniz,J.A., Carli,E., Tatschi,P.J., Swart,J.W. SPIE-The International Society for Optical Engineering
6 国際会議録 Electrical Characterization of Thin Gate Oxynitride Obtained by N+ Implantation into Polysilicon/ Thermal Oxide/ Silicon Structure Toquetti, L. Z., dos Santos Filho, S. G., Diniz, J. A., Swart, J. W. Electrochemical Society	12 国際会議録 A Comparative Study of Aluminum and Tungsten Silicon Schottky Diodes de Souza, P.R., Swart, J.W., Diniz, J.A. Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12