Blank Cover Image

Optimization of Pre-Amorphization and Dopant Implant Conditions for Advanced Annealing

著者名:
掲載資料名:
Advanced short-time thermal processing for Si-based CMOS devices : proceedings of the international symposium
シリーズ名:
Electrochemical Society Proceedings Series
シリーズ巻号:
2004-01
発行年:
2004
開始ページ:
31
終了ページ:
38
総ページ数:
8
出版情報:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566774062 [1566774063]
言語:
英語
請求記号:
E23400/200401
資料種別:
国際会議録

類似資料:

1 国際会議録 Optimization of Fluorine Co-Implantation for PMOS Source and Drain Extension Formation for 65 nm Technology Node

Graoui, H., Hilkene, M., McComb, B., Castle, M., Felch, S., Cowern, N.E.B., Al-Bayati, A., Tjandra, A., Foad, M.A.

Materials Research Society
7 国際会議録 Modeling and Experiments of Dopant Diffusion and Defects for Laser Annealed Junctions and Advanced USJ

Taiji Noda, Wilfried Vandervorst, Susan Felch, Vijay Parihar, Christa Vrancken, Thomas Y. Hoffmann

Materials Research Society
2 国際会議録 Ultra-Shallow Junctions Formed by Co-Implantation and Sub-Melt Laser Annealing

S. B. Felch, A. Falepin, S. Seven, E. Augendre, T. Noda, V. Parihar, F. Nouri, T. Hoffinann, B. Pawlak, P. Eyben, W. …

Electrochemical Society
8 国際会議録 Effect of Dopant Concentrations and Annealing Conditions on the Electrically Active Profiles and Lattice Damage in Al Implanted 4H-SiC

M.H. Weng, F. Roccaforte, F. Giannazzo, S. Di Franco, C. Bongiorno

Trans Tech Publications
3 国際会議録 Defect Evolution During Laser Annealing

Susan B. Felch, Abhilash Mayur, Vijay Parihar, Faran Nouri, Kevin S. Jones, Daniel E. Zeenberg, Britta E. Jones

Materials Research Society
9 国際会議録 Process Optimization for Multiple-Pulses Laser Annealing for Boron Implanted Silicon with Germanium Pre-Amorphization

Poon, Debora, Cho, Byung Jin, Lu, Yong Feng, Tan, Leng Seow, Bhat, Mousumi, See, Alex

Materials Research Society
4 国際会議録 RAPID THERMAL ANNEALING OF PRE-AMORPHIZED B AND BF2-IMPLANTED SILICON

Calder, I. D., Naguib, H. M., Houghton, D.

Materials Research Society
10 国際会議録 Influence of Annealing Conditions on Dopant Activation of Si+ and Mg+ Implanted GaN

Suvkhanov, A., Parikh, N., Usov, I., Hunn, J., Withrow, S., Thomson, D., Gehrke, T., Davis, R. F., Krasnobaev, L. Ya.

Trans Tech Publications
5 国際会議録 Effect of Varying Dwell Time During Non-Melt Laser Annealing of Boron Implanted Silicon

Daniel E. Zeenberg, Kevin S. Jones, Susan B. Felch, Vijay Parihar

Materials Research Society
11 国際会議録 MODELING OF DOPANT DIFFUSION DURING ANNEALING OF SUB-AMORPHIZING IMPLANTS

Dunham, Scott

MRS - Materials Research Society
6 国際会議録 Laser Anneal Technology for Enhancement of Poly-Silicon Dopant Activation

Ma, Y., Ahmed, K.Z., Cunningham, K.L., Olsen, C.S., Leung, T.Y.B., Mcintosh, R.C., Mayur, A.J., Liang, H., Yam, M., …

Electrochemical Society
12 国際会議録 Damage Relaxation Pre-Activation Anneal in Al-Implanted SiC

Bahng, W., Song, G.H., Kim, N.K., Kim, S.C., Seo, K.S., Kim, H.W., Kim, E.D.

Trans Tech Publications
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12