THE MECHANISM OF POLY-Si ETCHING DURING POLY/W GATE CLEANING BY FLUORINE BASED CLEANING SOLUTION

THE MECHANISM OF POLY-Si ETCHING DURING POLY/W GATE CLEANING BY FLUORINE BASED CLEANING SOLUTION

著者名:

掲載資料名:

Cleaning technology in semiconductor device manufacturing VIII : proceedings of the international symposium

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2003-26

発行年:

2003

開始ページ:

129

終了ページ:

134

総ページ数:

6

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566774116 [156677411X]

言語:

英語

請求記号:

E23400/200326

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014088
シリーズID:	PA00000028
会議名:	International Symposium on Cleaning Technology in Semiconductor Device Manufacturing ; Fall Meeting of the Electrochemical Society
回次:	8th ; 2003
会議開催地:	Orlando, Florida, USA
会議開催年:	2003.10.00

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