SUB-NANOMETER HIGH -K GATE STACK SCALING USING THE HF-LAST/NH3 AKNEAL INTERFACE | 東京工業大学附属図書館文献データベース

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SUB-NANOMETER HIGH -K GATE STACK SCALING USING THE HF-LAST/NH3 AKNEAL INTERFACE

著者名:

さらに 13 件

掲載資料名:

Cleaning technology in semiconductor device manufacturing VIII : proceedings of the international symposium

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2003-26

発行年:

2003

開始ページ:

93

終了ページ:

99

総ページ数:

7

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566774116 [156677411X]

言語:

英語

請求記号:

E23400/200326

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014088
シリーズID:	PA00000028
会議名:	International Symposium on Cleaning Technology in Semiconductor Device Manufacturing ; Fall Meeting of the Electrochemical Society
回次:	8th ; 2003
会議開催地:	Orlando, Florida, USA
会議開催年:	2003.10.00

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2 国際会議録 Effects of Structural Properties of Hf-Based Gate Stack on Transistor Performance Bersuker, G., Sim, J.H., Young, C.D., Choi, R., Lee, B.H., Lysaght, P., Brown, G.A., Zeitzoff, P.M., Gardner, M., Murto, … Materials Research Society	8 国際会議録 Compare various pre-deposition treatments such as SC1, SC2, ozone, Hf- last, and NH3 annealing. Moumen Electrochemical Society
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