Blank Cover Image

Superior properties of a novel iridium precursor for MOCVD are presented in terms of nucleation density, surface morphology, and incubation time.

著者名:
Oshima  
掲載資料名:
Physicas and technology of high-k gate dielectrics : proceedings of the International Symposium on High Dielectric Constant Materials : Materials Science, Processing, and Reliability, and Manufacturing Issues
シリーズ名:
Electrochemical Society Proceedings Series
シリーズ巻号:
2003-22
発行年:
2003
開始ページ:
231
終了ページ:
236
総ページ数:
6
出版情報:
Pennington, NJ: Electrochemical Society
ISSN:
01616374
ISBN:
9781566774055 [1566774055]
言語:
英語
請求記号:
E23400/200322
資料種別:
国際会議録

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