Characteristics of HfO2 films deposited by ALD, using a metal nitrite precursor, obtained from C-V, l-V, TEM, XRD, and ellipsometry

Characteristics of HfO2 films deposited by ALD, using a metal nitrite precursor, obtained from C-V, l-V, TEM, XRD, and ellipsometry

著者名:: Conley
掲載資料名:: Physicas and technology of high-k gate dielectrics : proceedings of the International Symposium on High Dielectric Constant Materials : Materials Science, Processing, and Reliability, and Manufacturing Issues
シリーズ名:: Electrochemical Society Proceedings Series
シリーズ巻号:: 2003-22
発行年:: 2003
開始ページ:: 175
終了ページ:: 186
総ページ数:: 12
出版情報:: Pennington, NJ: Electrochemical Society
ISSN:: 01616374
ISBN:: 9781566774055 [1566774055]
言語:: 英語
請求記号:: E23400/200322
資料種別:: 国際会議録

詳細

TDL書誌ID:	ZA00014085
シリーズID:	PA00000028
会議名:	International Symposium on High Dielectric Constant Materials ; Meeting of the Electrochemical Society
回次:	2nd ; 204th
会議開催地:	Orlando, FL, USA
会議開催年:	2003.10.12-2003.10.16

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