40 Growth of nickel silicide quantum dot arrays on epitaxial Si0.7Ge0.3 on (001) silicon with a sacrificial amorphous silicon interlayer

40 Growth of nickel silicide quantum dot arrays on epitaxial Si0.7Ge0.3 on (001) silicon with a sacrificial amorphous silicon interlayer

著者名:

掲載資料名:

Advanced short-time thermal processing for Si-based CMOS devices : proceedings of the international symposium

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2003-14

発行年:

2003

開始ページ:

325

終了ページ:

330

出版情報:

Pennington, NJ: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773966 [1566773962]

言語:

英語

請求記号:

E23400/200314

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014078
シリーズID:	PA00000028
会議名:	Symposium on Advanced short-time thermal processing for Si-based CMOS devices ; Meeting of the Electrochemical Society
回次:	2003 ; 203rd
会議開催地:	Paris, France
会議開催年:	2003.04.27-2003.04.30

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