Dramatic Improvements in AIGaN/GaN HEMT Device Isolation Characteristics After UV-Ozone Pre-Treatment
- 著者名:
Moser, N. Fitch, R. Via, D. Crespo, A. Yannuzzi, M. Jessen, G. Gillespie, J. Luo, B. Ren, F. Abernathy, C. Pearton, S. Gila, B. - 掲載資料名:
- State-of-the-art program on compound semiconductors XXXIX and nitride and wide bandgap semiconductors for sensors, photonics, and electronics IV : proceedings of the international symposia
- シリーズ名:
- Electrochemical Society Proceedings Series
- シリーズ巻号:
- 2003-11
- 発行年:
- 2003
- 開始ページ:
- 57
- 終了ページ:
- 67
- 総ページ数:
- 11
- 出版情報:
- Pennington, N.J.: Electrochemical Society
- ISSN:
- 01616374
- ISBN:
- 9781566773911 [1566773911]
- 言語:
- 英語
- 請求記号:
- E23400/200311
- 資料種別:
- 国際会議録
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