Growth and Characterization of InGaN Quantum Dots in InGaN/GaN Superlattices
- 著者名:
- 掲載資料名:
- State-of-the-art program on compound semiconductors XXXIX and nitride and wide bandgap semiconductors for sensors, photonics, and electronics IV : proceedings of the international symposia
- シリーズ名:
- Electrochemical Society Proceedings Series
- シリーズ巻号:
- 2003-11
- 発行年:
- 2003
- 開始ページ:
- 16
- 終了ページ:
- 20
- 総ページ数:
- 5
- 出版情報:
- Pennington, N.J.: Electrochemical Society
- ISSN:
- 01616374
- ISBN:
- 9781566773911 [1566773911]
- 言語:
- 英語
- 請求記号:
- E23400/200311
- 資料種別:
- 国際会議録
類似資料:
1
国際会議録
Mg Doping Concentration Influenced by Polarity of GaN Layer in InGaN/GaN Superlattice Structure
Electrochemical Society |
Trans Tech Publications |
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SPIE-The International Society for Optical Engineering |
MRS - Materials Research Society |
SPIE - The International Society of Optical Engineering |
MRS - Materials Research Society |
SPIE - The International Society of Optical Engineering |
SPIE - The International Society of Optical Engineering |
Materials Research Society |
SPIE-The International Society for Optical Engineering |
Society of Photo-optical Instrumentation Engineers |