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The Effect of Nitrogen Concentration at Silicon Oxynitride Gate Insulators Formed by 28N2+ Implantation into Silicon with Additional Conventional or Rapid Thermal Oxidation

著者名:
Felicio, A.G.
Diniz, J.A.
Godoy Fo., J.
Doi, I.
Pudeozi, M.A.A.
Swart, J.W.
さらに 1 件
掲載資料名:
Microelectronics technology and devices : SBMICRO 2003 : proceedings of the eighteenth international symposium
シリーズ名:
Electrochemical Society Proceedings Series
シリーズ巻号:
2003-9
発行年:
2003
開始ページ:
250
終了ページ:
258
総ページ数:
9
出版情報:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566773898 [156677389X]
言語:
英語
請求記号:
E23400/200309
資料種別:
国際会議録

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