The Lcakage Drain Current Behavior in Graded-Channel SOI nMOSFETs Operating up to 300℃

The Lcakage Drain Current Behavior in Graded-Channel SOI nMOSFETs Operating up to 300℃

著者名:

掲載資料名:

Microelectronics technology and devices : SBMICRO 2003 : proceedings of the eighteenth international symposium

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2003-9

発行年:

2003

開始ページ:

28

終了ページ:

37

総ページ数:

10

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773898 [156677389X]

言語:

英語

請求記号:

E23400/200309

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014073
シリーズID:	PA00000028
会議名:	SBMICRO
回次:	18th (2003)
会議開催地:	Sao Paulo, Brazil
会議開催年:	2003.09.08-2003.09.11

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