High Performance Strained-SOI CMOSFETs* | 東京工業大学附属図書館文献データベース

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High Performance Strained-SOI CMOSFETs*

著者名:

さらに 6 件

掲載資料名:

ULSI Process Integration : proceedings of the International Symposium

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2003-6

発行年:

2003

開始ページ:

518

終了ページ:

533

総ページ数:

16

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773768 [1566773768]

言語:

英語

請求記号:

E23400/200306

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014069
シリーズID:	PA00000028
会議名:	International Symposium on ULSI Process Integration ; Meeting of the Electrochemical Society
回次:	3rd ; 203rd
会議開催地:	Paris, France
会議開催年:	2003.04.28-2003.05.02

類似資料:

1 国際会議録 High performance strained-SOl CMOSFETs Takagi, S-I., Mizuno, T., Tezuka, T., Sugiyama, N, Numata, T., Usuda, K., Monyama, Y., Nakaharai, S., Koga, J., Tanabe, … Electrochemical Society	7 国際会議録 38 Fabrication of SiGe-on-Insulator substrates for high-performance strained SOI-MOSFETs by germanium condensation technique Fezuka, F., Suglyama, N., Mizuno, F, Nakaharai, S., Fakagi, S. Electrochemical Society
2 国際会議録 (3.1) 3:20 - 3:50 PM - Strained-Si/SiGe-on-Insulator CMOS Technology as a Platform of Device Performance Boosters (Invited) Takagi, S., Mizuno, T., Tezuka, T, Sugiyama, N., Numata, T., Usuda, K., Moriyama, Y., Nakaharai, S., Koga, J., Tanabe, … Electrochemical Society	8 国際会議録 Mobility-Enhanced Device Technologies Using SiGe/Ge MOS Channels S. Takagi, T. Irisawa, T. Tezuka, S. Nakaharai, T. Numata Electrochemical Society
3 国際会議録 Uniaxially Strained SGOI and SSOI Channels for High Performance Multi-Gate CMOS T. Irisawa, T. Numata, T. Tezuka, K. Usuda, N. Hirashita Electrochemical Society	9 国際会議録 Prospects and Critical Issues on Ge MOS Technologies S. Takagi, N. Taoka, S. Nakaharai, K. Ikeda, T. Tezuka Electrochemical Society
4 国際会議録 Strain Relaxation of Strained-Si Layers on SiGe-on-Insulator (SGOI) Structures After Mesa Isolation Usuda, Koji, Mizuno, Tomohisa, Tezuka, Tsutomu, Sugiyama, Naoharu, Moriyama, Yoshihiko, Nakaharai, Shu, Takagi, … Materials Research Society	10 国際会議録 Study of the Surface Cleaning of GOI and SGOI Substrates for Ge Epitaxial Growth Y. Moriyama, N. Hirashita, E. Toyoda, K. Usuda, S. Nakaharai Electrochemical Society
5 国際会議録 (6.4) 11:55 - 12:15 PM - Ge Diffusion Effect on Low Frequency Noise in Ultra-thin Strained-SOI CMOS Tanabe, A., Numata, T., Mizuno, T., Maeda, T., Takagi, S. (MIRAI) Electrochemical Society	11 国際会議録 (11.2) 3:40 - 4:00 PM - Formation Mechanism of Ge-on-lnsulator Layers by Ge-condensation Technique Nakaharai, S., Tezuka, T., Sugiyama, N., Takagi, S. (MIRAI ASET) Electrochemical Society
6 国際会議録 SiGe-on-Insulator and Ge-on-Insulator Substrates Fabricated by Ge-Condensation Technique for High-Mobility Channel CMOS Devices Tezuka, Tsutomu, Mizuno, Tomohisa, Sugiyama, Naoharu, Nakaharai, Shu, Moriyama, Yoshihiko, Usuda, Koji, Numata, … Materials Research Society	12 国際会議録 Ge Condensation Technologies for Advanced MOSFETs on SGOI and GOI Substrates N. Sugiyama, T. Tezuka, T. Irisawa, K. Usuda, Y. Moriyama Electrochemical Society

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