Steady-state characterization of partially depleted SOI CMOS gates
- 著者名:
- 掲載資料名:
- Silicon-on-insulator technology and devices XI : proceedings of the international symposium
- シリーズ名:
- Electrochemical Society Proceedings Series
- シリーズ巻号:
- 2003-5
- 発行年:
- 2003
- 開始ページ:
- 499
- 終了ページ:
- 504
- 総ページ数:
- 6
- 出版情報:
- Pennington, N.J.: Electrochemical Society
- ISSN:
- 01616374
- ISBN:
- 9781566773751 [156677375X]
- 言語:
- 英語
- 請求記号:
- E23400/200305
- 資料種別:
- 国際会議録
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Comparison of partially and fully depleted SOI transistors down to the sub 50-nm-gate length regime
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