Optimization of ultra-thin body, fully-depleted SOI device, with raised source/drain

Optimization of ultra-thin body, fully-depleted SOI device, with raised source/drain

著者名:

Egley, J.

掲載資料名:

Silicon-on-insulator technology and devices XI : proceedings of the international symposium

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2003-5

発行年:

2003

開始ページ:

307

終了ページ:

312

総ページ数:

6

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773751 [156677375X]

言語:

英語

請求記号:

E23400/200305

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014068
シリーズID:	PA00000028
会議名:	International Symposium on Silicon-on-Insulator Technology and Devices ; Meeting of the Electrochemical Society
回次:	11th ; 203rd
会議開催地:	Paris, France
会議開催年:	2003.04.28-2003.05.02

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1 国際会議録 Optimization of Ultra-Thin Body, Fully-Depleted-SOI Device, with Raised Source/Drain or Raised Extension Egley, J.L., Vandooren, A., Winstead, B., Verret, E., White, B., Nguyen, B.-Y. Electrochemical Society	7 国際会議録 Substrate bias effects in SOI FinFETs Pretet, J., Dauge, F., Vandooren, A., Mathew, L., Nguyen, B.-Y., Jomash, J., Cristoloveanu, S. Electrochemical Society
2 国際会議録 Physics and Integration of Fully-Depleted Silicon-On-Insulator Devices A. Vandooren Electrochemical Society	8 国際会議録 Raised Source and Drain Structure of Poly-Si TFTs He, S., Maa, J.-S. Electrochemical Society
3 国際会議録 Future trends in SOI Devices White, T., Barr, A., Thean, A., Vandooren, A., Mathew, L., Mendicino, M., Yeap, G., Nguyen, B.-Y., Orlowski, M. Electrochemical Society	9 国際会議録 Improved LOCOS Isolation for Ultra Thin 0.18 μm Fully-Depleted SOI CMOS van Meer, H., De Meyer, K. Electrochemical Society
4 国際会議録 Architectures comparison for ultra-thin fully-depleted submicron SOI MOSFErs Faynot, O., Giffard, B., Raynaud, C., Gautier, J. Electrochemical Society	10 国際会議録 Degradation of thin SiO2 sidewall spacers during the selective epitaxial growth for the fabrication of raised source/drain MOSFETs Unnikrishnan,S., Kim,B.Y., Wang,C.-L., Wu,Y.-K., Kwong,D.-L., Tasch,A.F. SPIE-The International Society for Optical Engineering
5 国際会議録 Temperature dependence of drain-induced barrier lowering in fully depleted SOI MOSFETs Jomaah, J, Ghibaudo, G, Pelloie, J L, Balestra, F Electrochemical Society	11 国際会議録 Advanced SOI MOSFETs: structures and device physics Invited Faynot, O., Vandooren, A., Ritzenthaler, R., Poiroux, T., Lolivier, J., Jahan, C., Barraud, S., Ernst, T., Andrieu, F., … Electrochemical Society
6 国際会議録 Physical and electrical properties of fully-depleted SOI devices Pelloie, J.L., Sun, Y.S. Electrochemical Society	12 国際会議録 Cryogenic Operation of Fully-Depleted SOI nFETs Li, Y., Cressler, J.D., Niu, G., Patel, J. Electrochemical Society

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