Multi-fin double-gate MOSFET fabricated by using (110)-oriented SOI wafers and orientation-dependent etching

Multi-fin double-gate MOSFET fabricated by using (110)-oriented SOI wafers and orientation-dependent etching

著者名:

Liu, V.

掲載資料名:

Silicon-on-insulator technology and devices XI : proceedings of the international symposium

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2003-5

発行年:

2003

開始ページ:

255

終了ページ:

260

総ページ数:

6

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773751 [156677375X]

言語:

英語

請求記号:

E23400/200305

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014068
シリーズID:	PA00000028
会議名:	International Symposium on Silicon-on-Insulator Technology and Devices ; Meeting of the Electrochemical Society
回次:	11th ; 203rd
会議開催地:	Paris, France
会議開催年:	2003.04.28-2003.05.02

類似資料:

1 国際会議録 Multi-fin Double Gate MOSFET Fabricated by Using (110)-Oriented SOT Wafers and Orientation dependent Etching Liu, Y.X., Ishii, K., Tsutsumi, T., Masahara, M., Takashima, H., Suzuki, E. Electrochemical Society	7 国際会議録 Highly Suppressed Threshold Voltage Roll-off Characteristics of the 4 nm-Thick SOI n- MOSFETs in the 40-135 nm Gate Length Regime Suzuki, E, Ishii, K, Kanemaru, S, Maeda, T, Tautaumi, T, Nagai, K, Sekigawa, T, Hiroshima, H Electrochemical Society
2 国際会議録 Demonstration and device design consideration of Vth-controllable independent double-gate MOSFET (4-Terminal XMOS) Inveted Masahara, M., Liu, Y.-X., Sakamoto, K., Endo, K., Matsukawa, T., Ishii, K., Sekigawa, T., Koike, H., Suzuki, E. Electrochemical Society	8 国際会議録 Investigation of charge control related performances In double-gate SOI MOSFETs Kiichytska, V., Chung, T.M., van Meer, H., de Meyer, K., Raskin, J.P., Flandre, D. Electrochemical Society
3 国際会議録 Double-Gate FinFET Innovation: From 3-Terminal to Flexible Threshold Voltage 4-T erminal Liu, Y., Masahara, M., Ishii, K., Suzuki, E. Electrochemical Society	9 国際会議録 1.4kV Double-Implanted MOSFETs Fabricated on 4H-SiC(000-1) H. Kono, T. Suzuki, K. Takao, M. Furukawa, M. Mizukami Trans Tech Publications
4 国際会議録 Advanced DG-MOSFETs Process Technologies E. Suzuki, Y. Liu, K. Endo, T. Matsukawa, M. Masahara Electrochemical Society	10 国際会議録 Competitive Growth between Deposition and Etching in 4H-SiC CVD Epitaxy Using Quasi-Hot Wall Reactor Kushibe, M., Ishida, Y., Okumura, H., Takahashi, T., Masahara, K., Ohno, T., Suzuki, T., Tanaka, T., Yoshida, S., Arai, … Trans Tech Publications
5 国際会議録 Emerging Double-gate MOS Device Technology E. Suzuki, Y. Liu, M. Mashara, K. Ishii Electrochemical Society	11 国際会議録 Intrinsic Advantages of SOI Multiple-Gate MOSFET (MuGFET) for Low Power Applications W. W. Xiong, C. Cleavelin, C. Hsu, M. Ma, K. Schruefer, K. Von Arnim, T. Schulz, I. Cayrefourcq, C. Mazure, P. Patruno, … Electrochemical Society
6 国際会議録 Advanced TiN Metal-Gate FinFET Technology Y. Liu, E. Sugimata, T. Matsukawa, M. Masahara, K. Endo, I. Kenichi, T. Shimizu, H. Yamauchi, S. Ouchi, E. Suzuki Electrochemical Society	12 国際会議録 Advanced Metal Gate FinFET CMOS TEchnology Y. Liu, T. Matsukawa, K. Endo, M. Masahara, S. Ouchi Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12