A study on selective Si0.8Ge0.2 etch using polysilicon etchant diluted by H20 for three-dimensional Si structure application

A study on selective Si0.8Ge0.2 etch using polysilicon etchant diluted by H20 for three-dimensional Si structure application

著者名:

掲載資料名:

Silicon-on-insulator technology and devices XI : proceedings of the international symposium

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2003-5

発行年:

2003

開始ページ:

81

終了ページ:

86

総ページ数:

6

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773751 [156677375X]

言語:

英語

請求記号:

E23400/200305

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014068
シリーズID:	PA00000028
会議名:	International Symposium on Silicon-on-Insulator Technology and Devices ; Meeting of the Electrochemical Society
回次:	11th ; 203rd
会議開催地:	Paris, France
会議開催年:	2003.04.28-2003.05.02

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