DC Characteristics of AIGaN/GaN Heterostructure Field-effect Transistors on Free-Standing GaN Substrates

DC Characteristics of AIGaN/GaN Heterostructure Field-effect Transistors on Free-Standing GaN Substrates

著者名:

Irokawa, Y.

掲載資料名:

State-of-the-art program on compound semiconductors XXXVIII and wide bandgap semiconductors for photonic and electronic devices and sensors III : proceedings of the international symposia

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2003-4

発行年:

2003

開始ページ:

214

終了ページ:

222

総ページ数:

9

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773492 [1566773490]

言語:

英語

請求記号:

E23400/200304

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014067
シリーズID:	PA00000028
会議名:	State-of-the-Art Program on Compound Semiconductors - SOTAPOCS ; Symposium on Wide Bandgap Semiconductors for Photonic and Electronic Devices and Sensors ; Meeting of the Electrochemical Society
回次:	38th ; 3rd ; 203rd
会議開催地:	Paris, France
会議開催年:	2003.04.27-2003.05.02

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