Scaling Issues for Advanced SOI Devices: Gate Oxide Tunneling, Thin Buried Oxide, and Ultra-Thin Films | 東京工業大学附属図書館文献データベース

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Scaling Issues for Advanced SOI Devices: Gate Oxide Tunneling, Thin Buried Oxide, and Ultra-Thin Films

著者名:

Cristoloveanu, S.

さらに 4 件

掲載資料名:

Silicon nitride and silicon dioxide thin insulating films VII : proceedings of the international symposium

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2003-2

発行年:

2003

開始ページ:

476

終了ページ:

487

総ページ数:

12

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773478 [1566773474]

言語:

英語

請求記号:

E23400/200302

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014065
シリーズID:	PA00000028
会議名:	Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films
回次:	7th
会議開催地:	Paris, France
会議開催年:	2003.04.28-2003.05.02

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1 国際会議録 Characterization and modeling of advanced SOI materials and devices Allibert, F., Pretet, J., Ernst, T., Jomaah, J., Cristoloveanu, S. Kluwer Academic Publishers	7 国際会議録 ALD alumina films as buried dielectric layers for SOI structures de Beaumont, C., Moriceau, H., Rayssac, O., Bresson, N., Cristoloveanu, S., Charvet, A.M. Electrochemical Society
2 国際会議録 Adaptation of Ψ-MOSFET techniques for ultra thin SOI Bresson, N., Allibert, F., Cristoloveanu, S. Electrochemical Society	8 国際会議録 Advanced SOI MOSFETs: structures and device physics Invited Faynot, O., Vandooren, A., Ritzenthaler, R., Poiroux, T., Lolivier, J., Jahan, C., Barraud, S., Ernst, T., Andrieu, F., … Electrochemical Society
3 国際会議録 Special Frequency-Dependent Transient Mechanisms in SO1 MOSFETs Measured by a New Technique: The Average Transient Current Ernst, T., Lakeou, S., Allibert, F., Pretet, J., Cristoloveanu, S. Electrochemical Society	9 国際会議録 Performance and Physical Mechanisms in Thin Film SOI MOSFETs as a Function of Temperature J. Jomaah, F. Balestra, G. Ghibaudo Electrochemical Society
4 国際会議録 Reliability and electrical fluctuations in advanced SOI CMOS devices Jomaah, J., Balestra, F. Kluwer Academic Publishers	10 国際会議録 An overview of low-frequency noise in advanced CMOS/SOI transistors (Invited Paper) Jomaah, J., Balestra, F. SPIE-The International Society for Optical Engineering
5 国際会議録 Low-Temperature Performance of Ultimate Si-Based MOSFETS J. Jomaah, G. Ghibaudo, S. Cristoloveanu, A. Vandooren, F. Dieudonné, J. Pretet, F. Lime, K. Oshima, B. Guillaumot, F. … Electrochemical Society	11 国際会議録 High dose Implantation Impact on the Carrier Mobility in Ultra-Thin Unstrained and Strained SOI Films C. Dupre, P. Fazzini, T. Ernst, F. Cristiano, J. Hartmann, A. Claverie, F. Andrieu, O. Faynot, P. Rivallin, F. Laugier, … Electrochemical Society
6 国際会議録 Impact of the Schottky contacts on characterization of ultra-thin SOI pseudo-MOS transistors Sato, S., Komiya, K., Bresson, N., Omura, Y., Cristoloveanu, S. Electrochemical Society	12 国際会議録 Analysis and modeling of self-heating effects in thin-film SOI MOSFET's as a function of temperature Jomaah, J., Balestra, F., Ghibaudo, G. Electrochemical Society

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