Nitrogen Content and Interface Trap Reduction in SiO2/4H-SiC

Nitrogen Content and Interface Trap Reduction in SiO2/4H-SiC

著者名:

McDonald, K.

掲載資料名:

Silicon nitride and silicon dioxide thin insulating films VII : proceedings of the international symposium

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2003-2

発行年:

2003

開始ページ:

341

終了ページ:

347

総ページ数:

7

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773478 [1566773474]

言語:

英語

請求記号:

E23400/200302

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014065
シリーズID:	PA00000028
会議名:	Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films
回次:	7th
会議開催地:	Paris, France
会議開催年:	2003.04.28-2003.05.02

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2 国際会議録 Passivation of the 4H-SiC/SiO2 Interface with Nitric Oxide Williams, J.R., Chung, G.Y., Tin, C.C., McDonald, K., Farmer, D., Chanana, R.K., Weller, R.A., Pantelides, S.T., … Trans Tech Publications	8 国際会議録 Effects of N Incorporation on Electron Traps at SiO₂/SiC Interfaces A.F. Basile, S. Dhar, J.R. Williams, L.C. Feldman, P.M. Mooney Trans Tech Publications
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4 国際会議録 Nitrogen and Hydrogen Induced Trap Passivation at the SiO2/4H-SiC Interface Dhar, S., Wang, S.R., Ahyi, A.C., Isaacs-Smith, T., Pantelides, S.T., Williams, J.R., Feldman, L.C. Trans Tech Publications	10 国際会議録 Effect of Process Variations on 4H Silicon Carbide n-Channel MOSFET Mobilities Lu, C.-Y., Cooper, J.A., Jr., Chung, G.Y., Williams, J.R., McDonald, K., Feldman, L.C. Trans Tech Publications
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