Electrical Properties and the Reliability of Silicon Nitride Gate Dielectrics Formed by Various Processes and Annealing Treatments

Electrical Properties and the Reliability of Silicon Nitride Gate Dielectrics Formed by Various Processes and Annealing Treatments

著者名:

掲載資料名:

Silicon nitride and silicon dioxide thin insulating films VII : proceedings of the international symposium

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2003-2

発行年:

2003

開始ページ:

315

終了ページ:

327

総ページ数:

13

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773478 [1566773474]

言語:

英語

請求記号:

E23400/200302

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014065
シリーズID:	PA00000028
会議名:	Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films
回次:	7th
会議開催地:	Paris, France
会議開催年:	2003.04.28-2003.05.02

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