New Reliability Issues of CMOS Transistors with 1.3nm Thick Gate Oxide

New Reliability Issues of CMOS Transistors with 1.3nm Thick Gate Oxide

著者名:

掲載資料名:

Silicon nitride and silicon dioxide thin insulating films VII : proceedings of the international symposium

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2003-2

発行年:

2003

開始ページ:

228

終了ページ:

240

総ページ数:

13

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773478 [1566773474]

言語:

英語

請求記号:

E23400/200302

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014065
シリーズID:	PA00000028
会議名:	Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films
回次:	7th
会議開催地:	Paris, France
会議開催年:	2003.04.28-2003.05.02

類似資料:

1 国際会議録 35 New Developments in Schottky Source/Drain High-k/Metal Gate CMOS Transistors Li, M.-F., Lee, S., Zhu, S., Li, R., Chen, J., Chin, A., Kwong, D.L. (Invited Paper) Electrochemical Society	7 国際会議録 Ultrathin Oxide Reliability: Effects of Gate Doping Concentration and Poly-Si/SiO2 Interface Stress Relaxation Unnikrishnan, S., Kim, B.Y., Wang, C.L., Kwong, D.L., Tasch, A.F. Electrochemical Society
2 国際会議録 Process optimization of dual-gate CMOS Liu,I.M., Chen,Y.Y., Connor,C., Joshi,A.B., Kwong,D.L. SPIE-The International Society for Optical Engineering	8 国際会議録 1.3-μm VCSEL production issues Kisker, D.W., Chirovsky, L.M.F., Naone, R.L., Hove, J.M.V., Rossler, J.M., Adamcyk, M., Wasinger, N., Beltran, J.G., … SPIE - The International Society of Optical Engineering
3 国際会議録 Materials and processing issues in the development of N2O/NO-based ultrathin oxynitride gate dielectrics for CMOS ULSI applications Kim,B.Y., Wristers,D., Kwong,D.L. SPIE-The International Society for Optical Engineering	9 国際会議録 Characteristics of Ultra Thin (EOT<1 nm) RTCVD Zr Silicate (Zr 27Si 10O 63) Gate Dielectrics Lee, C.H., Luan, H.F, Bat, W.P., Lee, S.J., Jean, T.S., Roberts, D., Kwong, D.L. Electrochemical Society
4 国際会議録 Process Dependence of MOSFET Performance and Reliability with N2O-Based Furnace-Grown Gate Oxides Han, L.K, Wang, H.H., Yoon, G.W., Allman, D., Kwong, D.L. Electrochemical Society	10 国際会議録 CMOS Integration Issues with High-K/Metal Gate Stack D. Kwong Electrochemical Society
5 国際会議録 Ultrathin Oxide Reliability: Effects of Gate Doping Concentration and Poly- Si/SiO2 Interface Stress Relaxation Wristers, D., Wang, H.H., Han, L.K., Lin, C., Chen, T.S., Kwong, D.L., Fulford, J. Electrochemical Society	11 国際会議録 Integration Issues with High k Gate Stacks* Osburn, C.M., Han, S.K., Kim, I., Campbell, S.A., Garfunkel, E., Gustafson, T., Hauser, J., King, T.-J., Liu, Q., … Electrochemical Society
6 国際会議録 Impact of the Nitrogen Concentration of Sub-1.3 nm Gate Oxides on 65 nm Technology Transistor parameters Antônio L. P. Rotondaro, R. T. Laakrsonen, S. P. Singh Electrochemical Society	12 国際会議録 Characteristics of BaXSr1-XTiO3 thin films by metallorganic chemical vapor deposition for ultrahigh-density DRAM application Mim,B.W., Roh,J.S., Yan,J., Kwong,D.L. SPIE-The International Society for Optical Engineering

1

2

3

4

5

6

7

8

9

10

11

12