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Low-Temperature-Proceeded Gate Insulator for Poly-Si TFTs by Combination of Photo-Oxidation and PECVD

著者名:
掲載資料名:
Thin Film Transistor Technologies VI : proceedings of the international symposium
シリーズ名:
Electrochemical Society Proceedings Series
シリーズ巻号:
2002-23
発行年:
2002
開始ページ:
176
終了ページ:
189
総ページ数:
14
出版情報:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566773850 [1566773857]
言語:
英語
請求記号:
E23400/200223
資料種別:
国際会議録

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