Gate Dielectrics for Thin Film Transistor of Nanocrystalline Silicon Deposited at 150℃
- 著者名:
- 掲載資料名:
- Thin Film Transistor Technologies VI : proceedings of the international symposium
- シリーズ名:
- Electrochemical Society Proceedings Series
- シリーズ巻号:
- 2002-23
- 発行年:
- 2002
- 開始ページ:
- 33
- 終了ページ:
- 41
- 総ページ数:
- 9
- 出版情報:
- Pennington, N.J.: Electrochemical Society
- ISSN:
- 01616374
- ISBN:
- 9781566773850 [1566773857]
- 言語:
- 英語
- 請求記号:
- E23400/200223
- 資料種別:
- 国際会議録
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1
国際会議録
Evolution of Nanocrystalline Silicon Layers Deposited at 150℃ for Thin Film Transistor Channels
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Self-Aligned Nanocrystalline Silicon Thin-Film Transistor with Deposited n⁺ Source/Drain Layer
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