A Novel Approach to Reduce Via Corner Faceting in the Via-First, No Middle Stop Layer Dual Damascene Trench Etch
- 著者名:
Kim, Y-S. Doan, K.L. Bjorkman, C. Paterson, A. Sui, Z. Shan, H. - 掲載資料名:
- Plasma processing XIV : proceedings of the international symposium
- シリーズ名:
- Electrochemical Society Proceedings Series
- シリーズ巻号:
- 2002-17
- 発行年:
- 2002
- 開始ページ:
- 277
- 終了ページ:
- 289
- 総ページ数:
- 13
- 出版情報:
- Pennington, N.J.: Electrochemical Society
- ISSN:
- 01616374
- ISBN:
- 9781566773416 [1566773415]
- 言語:
- 英語
- 請求記号:
- E23400/200217
- 資料種別:
- 国際会議録
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Electrochemical Society |
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国際会議録
New chemical approach for resist poisoning problem in via first dual-damascene process [6153-99]
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国際会議録
Integration using inorganic BARC in a via-first dual-damascene process with low-k dielectric
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