Etching of High-k Gate Dielectrics and Gate Metal Candidates | 東京工業大学附属図書館文献データベース

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Etching of High-k Gate Dielectrics and Gate Metal Candidates

著者名:

さらに 4 件

掲載資料名:

Plasma processing XIV : proceedings of the international symposium

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2002-17

発行年:

2002

開始ページ:

199

終了ページ:

209

総ページ数:

11

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773416 [1566773415]

言語:

英語

請求記号:

E23400/200217

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014050
シリーズID:	PA00000028
会議名:	International Symposium on Plasma Processing ; Centennial Meeting of the Electrochemical Society
回次:	14th ; 201st
会議開催地:	Philadelphia, PA, USA
会議開催年:	2002.05.12-2002.05.17

類似資料:

1 国際会議録 Device Fabrication and Evaluation of Alternative High-K Dielectrics and Gate Electrodes Using a Non-Self Aligned Gate process Kim, I., Han, S.K., Kiether, W., Lee, S.J., Lee, C.H., Luan, H.F., Luo, Z., Rying, E., Wicaksana, Z.Wang D., Zhu, W., … Electrochemical Society	7 国際会議録 Stability of Advanced Gate Stack Devices Kim, I., Han, S.K., Osburn, G.M. Electrochemical Society
2 国際会議録 Integration Issues with High k Gate Stacks* Osburn, C.M., Han, S.K., Kim, I., Campbell, S.A., Garfunkel, E., Gustafson, T., Hauser, J., King, T.-J., Liu, Q., … Electrochemical Society	8 国際会議録 Wear-Out and Stress-Induced Leakage Current of Ultrathin Gate Oxides Thees, H.-J., Osburn, C.M., Shiely, J.P., Massoud, H.Z. Electrochemical Society
3 国際会議録 Electrical and Material Properties of Metal Silicate Dielectrics and Metal Gates for Advanced CMOS Devices Misra, V., Kulkarni, M., Heuss, G., Zhong, H., Lazar, H. Electrochemical Society	9 国際会議録 Materials and Processes for High k Gate Stacks: Results from the FEP Tzansition Center C. Osburn, S. Campbell, A. Demkov, E. Eisenbraun, E. Garfunkel, F. Gustafsson, A. I. Kingon, J. Lee, D. Lichtenwalner, … Electrochemical Society
4 国際会議録 NMOS Gate Electrode Selection Process for Advanced Silicon Devices Misra, V., Heuss, G., Suh, Y.-S., Zhong, H., Lee, J.-H. Electrochemical Society	10 国際会議録 High-K gate dielectrics Qi,W.-Y., Lee,B.H., Nieh,R., Kang,L., Jeon,Y., Onishi,K., Lee,J.C. SPIE - The International Society for Optical Engineering
5 国際会議録 Effect of Post Metallization Annealing for Alternative Gate Stack Devices Kim, I., Finn, S.K., Osburn, C.M. Electrochemical Society	11 国際会議録 Breakdown Characteristics of High-k Gate Dielectrics with Metal Gates D. Misra, N. Chowdhury, G. Bersuker, C. Young, R. Choi Electrochemical Society
6 国際会議録 Plasma Etching for the Application to Low-K Dielectrics Devices J.W. Lee, H.W. Kim, J.W. Han, M.S. Kim, B.D. Yoo, M.H. Kim, C.H. Lee, C.H. Lim, S.K. Hwang, C. Lee, D.J. Chung, S.G. … Trans Tech Publications	12 国際会議録 Promising Gate Stacks with Ru and RuO2 Gate Electrodes and Y-Silicate Dielectrics Zhong, Huicai, Heuss, Greg, Suh, You-Seok, Hong, Shin-Nam, Misra, Veena, Kelly, Jason, Parsons, Gregory Materials Research Society

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