Process Optimization in Atomic Layer Deposition of High-K Oxides for Advanced Gate Stack Engineering
- 著者名:
Londergan, A.R. Ramanathan, S. Vu, K. Rassiga, S. Hiznay, R. Winkler, J. Velasco, H. Matthysse, L. Seidel, T.E. Ang, C.H. Yu, H.Y. Li, M.F. - 掲載資料名:
- Rapid thermal and other short-time processing technologies III : proceedings of the international symposium
- シリーズ名:
- Electrochemical Society Proceedings Series
- シリーズ巻号:
- 2002-11
- 発行年:
- 2002
- 開始ページ:
- 163
- 終了ページ:
- 176
- 総ページ数:
- 14
- 出版情報:
- Pennington, NJ: Electrochemical Society
- ISSN:
- 01616374
- ISBN:
- 9781566773348 [1566773342]
- 言語:
- 英語
- 請求記号:
- E23400/200211
- 資料種別:
- 国際会議録
類似資料:
Electrochemical Society | |
Materials Research Society |
Electrochemical Society |
Electrochemical Society |
9
国際会議録
Interface Engineering by PVD-Based In-Situ Fabrication Method for Advanced Metal/High-k Gate Stacks
Electrochemical Society |
4
国際会議録
Atomic Layer Deposition of Aluminum Nitride Thin Films From Trimethyl Aluminum (TMA) and Ammonia
Materials Research Society |
Electrochemical Society |
5
国際会議録
Advanced Metal Gate Electrode Options Compatible with ALD and AVD HfSiO x-Based Gate Dielectrics
Electrochemical Society |
Electrochemical Society |
Electrochemical Society |
Electrochemical Society |