Blank Cover Image

Determination of the Silicon Film Doping Concentration and the Back Interface Oxide Charge Density using SOI-NMOS Gate Capacitor

著者名:
掲載資料名:
Microelectronics technology and devices : SBMICRO 2002 : proceedings of the seventeenth international symposium
シリーズ名:
Electrochemical Society Proceedings Series
シリーズ巻号:
2002-8
発行年:
2002
開始ページ:
2
終了ページ:
11
総ページ数:
10
出版情報:
Pennington, N.J.: Electrochemical Society
ISSN:
01616374
ISBN:
9781566773287 [1566773288]
言語:
英語
請求記号:
E23400/2002-8
資料種別:
国際会議録

類似資料:

1 国際会議録 Determination of Silicon Film Doping Concentration and Back Oxide Charge Density using SOI-MOS Capacitor

Sonnenberg, V., Martino, J.A.

Electrochemical Society
7 国際会議録 Simple Method to Determine the Poly Gate Doping Concentration Based on Poly Depletion Effect

Rodrigues, M., Sonnenberg, V., Martino, J. A.

Electrochemical Society
2 国際会議録 A Simple Method to Extract the Oxide Charge Density at the Buried Oxide/Substrate Interface in SOI Capacitor

Sonnenberg, V, Martino, J

Electrochemical Society
8 国際会議録 Analysis of the Capacitance vs. Voltage in Graded Channel SOI Capacitor

Sonnenberg, V., Martino, J.A.

Electrochemical Society
3 国際会議録 Extraction of the interface and oxide charge density in SOI MOSFETs

Simoen, E, Claeys, C, Lukyanchikotva, N, Petrichuk, M, Garbar, N, Martino, J A, Sonnenberg, V

Electrochemical Society
9 国際会議録 Extraction of the Oxide Charges at the Buried Oxide/Silicon Substrate Interface in Accumulation-Mode SOI pMOSFETs at Low Temperatures

Pavanello, M A, Martino, J A

Electrochemical Society
4 国際会議録 The Influence of the Interface Trap Densities on the Extraction of the Silicon Film and Front Oxide Thickness of SOI NMOS Devices at Low Temperatures

Nicolett, A.S., Martino, J.A., Simoen, F., Claeys, C.

Electrochemical Society
10 国際会議録 Influence of the Gate Oxide Tunneling Effect on the Extraction of the Silicon Film and Front Oxide Thickness in SOI NMOSFET

Paiola, A. G., Nicolett, A, S., Martino, J. A.

Electrochemical Society
5 国際会議録 Detcrmination of the Silicon Film Thickness and Back Oxide Charge Density on Graded- Channel SOI oMOSFETs

Nicolett, A.S., Martino, J.A., Pavanello, M.A.

Electrochemical Society
11 国際会議録 Triple Gate FinFET Parameter Extraction Using High Frequency Capacitance - Voltage Curves

M. Rodrigues, V. Sonnenberg, J. A. Martino

Electrochemical Society
6 国際会議録 A new method for determination of the fixed charge density at the buried oxide/underlying substrate interface in SOI MOSFETs

Pavanello, M.A., Martino, J.A.

Electrochemical Society
12 国際会議録 Theoretical and Experimental Study of the Front and Back Interface Trap Density in Accumulation-Mode SOI MOSFETs

Martino, J.A., Simoen, E., Claeys, C.

Electrochemical Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12