Effect of Proton Radiation on dc And rf Performance of AIGaN/GaN HEMTs
- 著者名:
Kim, J. Gila, B.P. Mehandnj, R. Johnson, J.W. Shin, J.H. Lee, K.P. Luo, B. Onstine, A. Abernathy, C.R. Pearton, S.J. Ren, F. - 掲載資料名:
- State-of-the-art program on compound semiconductors XXXVI and wide bandgap semiconductors for photonic and electronic devices and sensors II : proceedings of the international symposia
- シリーズ名:
- Electrochemical Society Proceedings Series
- シリーズ巻号:
- 2002-3
- 発行年:
- 2002
- 開始ページ:
- 191
- 終了ページ:
- 197
- 総ページ数:
- 7
- 出版情報:
- Pennington, N.J.: Electrochemical Society
- ISSN:
- 01616374
- ISBN:
- 9781566773690 [1566773695]
- 言語:
- 英語
- 請求記号:
- E23400/2002-3
- 資料種別:
- 国際会議録
類似資料:
1
国際会議録
Electrical Characterization of GaN Metal Oxide Semiconductor Diodes Using MgO as the Gate Oxide
Materials Research Society |
Electrochemical Society |
Materials Research Society |
Electrochemical Society |
3
国際会議録
Electrical Characterization of GaN Metal Oxide Semiconductor Diode Using Sc2O3 as the Gate Oxide
Materials Research Society |
Materials Research Society |
4
国際会議録
Electrical Characterization of GaN Metal Oxide Semiconductor Diodes Using MgO As The Gate Oxide
Electrochemical Society |
Materials Research Society |
Electrochemical Society |
Materials Research Society |
Electrochemical Society |
Electrochemical Society |