MOCVD Growth of n-AlxGa1-xN

MOCVD Growth of n-AlxGa1-xN

著者名:

掲載資料名:

State-of-the-art program on compound semiconductors XXXVI and wide bandgap semiconductors for photonic and electronic devices and sensors II : proceedings of the international symposia

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2002-3

発行年:

2002

開始ページ:

141

終了ページ:

149

総ページ数:

9

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773690 [1566773695]

言語:

英語

請求記号:

E23400/2002-3

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014037
シリーズID:	PA00000028
会議名:	State-of-the-art program on compound semiconductors ; Wide bandgap semiconductors for photonic and electronic devices and sensors
回次:	36th ; 2nd
会議開催地:	Philadelphia, PA, USA
会議開催年:	2002.05.12-2002.05.17

類似資料:

1 国際会議録 Optical Absorption of Nitrogen Vacancy in Proton Irradiated AlxGa1-xN Thin Films Zhou, Qiaoying, Manasreh, M.O., Pophristic, M., Ferguson, Ian T., Weaver, B.D. Materials Research Society	7 国際会議録 In-Plane Optical Anisotropies of AlxGa1-xN Films in Their Regions of Transparency Rossow, U., Edwards, N. V., Bremser, M. D., Kern, R. S., Liu, H., Davis, R. F., Aspnes, D. E. MRS - Materials Research Society
2 国際会議録 MOVPE Growth and Characterization of AlxGa1-xN Layers on Sapphire Clur, S., Briot, O., Rouviere, J. L., Andenet, A., Vaillant, Y-M. Le, Gil, B., Aulombard, R. L., Demangeot, J. F., … MRS - Materials Research Society	8 国際会議録 X-ray Diffraction Analysis of GaN and AlGaN Kang, H., Spencer, N., Nicol, D., Feng, Z.C., Ferguson, I., Guo, S.P., Pophristic, M., Peres, B. Materials Research Society
3 国際会議録 Growth via MOCVD and Characterization of GaN and AlxGa1-xN(0001) Alloys for Optoelectric and Microelectronic Device Applications Davis, Robert F., Weeks, T. W., Jr., Bremser, M. D., Ailey, K. S., Perry, W. G. MRS - Materials Research Society	9 国際会議録 UV photodetectors based on AlxGa1-xN grown by MOCVD Saxler,A., Walker,D., Zhang,X., Kung,P., Xu,J., Razeghi,M. SPIE-The International Society for Optical Engineering
4 国際会議録 Carrier recombination dynamics of AlxGa1-xN epilayers grown by MOCVD Cho, Y-H., Gainer, G. H., Lam, J. B., Song, J. J., Yang, W., McPherson, S. A. MRS-Materials Research Society	10 国際会議録 Raman studies as a tool for characterization of the strained hexagonal GaN/AlxGa1-xN superlattices Davydov, V.Yu., Smirnov, A.N., Goncharuk, I.N., Kyutt, R.N., Scheglov, M.P., Baidakova, M.V., Lundin, W.V., Zavarin, … SPIE-The International Society for Optical Engineering
5 国際会議録 Ultravlolet photodetectors based on GaN and AlxGa1-xN epitaxial layers Shmidt,N.M., Lundin,W.V., Sakharov,A.V., Usikov,A.S., Zavarin,E.E., Govorkov,A.V., Polyakov,A.Ya., Smirnov,N.B. SPIE-The International Society for Optical Engineering	11 国際会議録 AlxGa1-xN-Based Materials and Heterostructures Kung, P., Saxler, A., Walker, D., Zhang, X., Lavado, R., Kim, K. S., Razeghi, M. MRS - Materials Research Society
6 国際会議録 Effect of the Inter-Subband Scattering in Modulation-Doped AlxGa1-xN/GaN Heterostructures Zheng, Z.W., Shen, B., Jiang, C.P., Guo, S.L., Liu, J., Zhou, H.M., Zhang, R., Shi, Y., Zheng, Y.D., Zheng, G.Z., Chu, … Materials Research Society	12 国際会議録 Quaternary InAIGaN-based multiquantum wells for ultraviolet light-emitting diode application Guo, S., Pophristic, M., Lee, D.S., Peres, B., Ferguson, I.T., Lee, J., Osinski, M. SPIE-The International Society for Optical Engineering

1

2

3

4

5

6

7

8

9

10

11

12