Photo-Enhanced Wet Oxidation And Etching of GaN*

Photo-Enhanced Wet Oxidation And Etching of GaN*

著者名:

掲載資料名:

State-of-the-art program on compound semiconductors XXXVI and wide bandgap semiconductors for photonic and electronic devices and sensors II : proceedings of the international symposia

シリーズ名:

Electrochemical Society Proceedings Series

シリーズ巻号:

2002-3

発行年:

2002

開始ページ:

127

終了ページ:

133

総ページ数:

7

出版情報:

Pennington, N.J.: Electrochemical Society

ISSN:

01616374

ISBN:

9781566773690 [1566773695]

言語:

英語

請求記号:

E23400/2002-3

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00014037
シリーズID:	PA00000028
会議名:	State-of-the-art program on compound semiconductors ; Wide bandgap semiconductors for photonic and electronic devices and sensors
回次:	36th ; 2nd
会議開催地:	Philadelphia, PA, USA
会議開催年:	2002.05.12-2002.05.17

類似資料:

1 国際会議録 Optical pumping spectra for InxGa1-xN/GaN multiple-quantum-well structures with indium content x>0.35 Chen,C.-C., Chuang,H.-W., Chi,G.-C., Chuo,C.-C., Chyi,J.-I. SPIE - The International Society for Optical Engineering	7 国際会議録 Temperature Dependent Performance of GaN Schottky Diode Rectifiers Cao, X. A., Dang, G. T., Zhang, A. P., Ren, F., Pearton, S. J., Lee, C. -M., Chuo, C. -C., Chyi, J. -I., Chi, G. C., … Trans Tech Publications
2 国際会議録 Processing and device performance of GaN power rectifiers Zhang, A. P., Dang, G. T., Cao, X. A., Cho, H., Ren, F., Han, J., Chyi, J-I., Lee, C-M., Nee, T-E., Chuo, C-C., Chi, … MRS-Materials Research Society	8 国際会議録 The Mechanism of Photoenhanced Wet Etching of GaN Bardwell, J.A., Webb, J.B., Tang, H., Fraser, J., Moisa, S. Electrochemical Society
3 国際会議録 GaN Power Devices Pearton, S.J., Ren, F., Zhang, A.P., Dang, G., Cac, X.A., Lee, K.P., Cho, H., Gila, B.P., Johnson, J.W., Monier, C., … Electrochemical Society	9 国際会議録 Damage-Free Photo-Assisted Cryogenic Etching of GaN as Evidenced by Reduction of Yellow Luminescence Hsieh, J. T., Hwang, J. M., Hwang, H. L., Hung, W. H. MRS - Materials Research Society
4 国際会議録 High Breakdown Field (> 15MV/cm) on Crystalline β-Ga2O3/GaN Metal Oxide Semiconductor Device Peng, L.-H., Wu, H.-M. Electrochemical Society	10 国際会議録 Simultaneously Enhancing Internal and Extraction Efficiencies of GaN-based Light Emitting Diodes Via Chemical-Wet-Etching Patterned-Sapphire-Substrate (CWE-PSS) Y.J. Lee, C.H. Chiu, H. Kuo, T.C. Lu, S.C. Wang Electrochemical Society
5 国際会議録 Highly Selective Photoenhanced Wet Etching of GaN for Defect Investigation and Device Fabrication Visconti, P., Reshchikov, M.A., Jones, K.M., Yun, F., Wang, D. F., Cingolani, R., Morkoc, H., Litton, C. W., Molnar, R. … Materials Research Society	11 国際会議録 GaN Etching in BCl3/Cl2 Plasmas Shul, R. J., Ashby, C. I. H., Willison, C. G., Zhang, L., Han, J., Bridges, M. M., Pearton, S. J., Lee, J. W., Lester, … MRS - Materials Research Society
6 国際会議録 SiO2/Gd2O3/GaN Metal Oxide Semiconductor Field Effect Transistors Johnson, J.W., Gila, B.P., Luo, B., Lee, K.P., Abernathy, C.R., Pearton, S.J., Chyi, J.I., Nee, T.E., Lee, C.M., Chuo, … Electrochemical Society	12 国際会議録 Simple wet etching of GaN Parish, G., Scali, P.A., Spaargaren, S.M.R., Nener, B.D. SPIE-The International Society for Optical Engineering

1

2

3

4

5

6

7

8

9

10

11

12